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PDF CY7C09379 Data sheet ( Hoja de datos )

Número de pieza CY7C09379
Descripción (CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM
Fabricantes Cypress Semiconductor 
Logotipo Cypress Semiconductor Logotipo



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25/0251
CY7C09279/89
CY7C09379/89
32K/64K x16/18
Synchronous Dual Port Static RAM
Features
• True dual-ported memory cells which allow simulta-
neous access of the same memory location
• Six Flow-Through/Pipelined devices
— 32K x 16/18 organization (CY7C09279/379)
— 64K x 16/18 organization (CY7C09289/389)
• Three Modes
— Flow-Through
— Pipelined
— Burst
• Pipelined output mode on both ports allows fast 100-
MHz cycle time
• 0.35-micron CMOS for optimum speed/power
• High-speed clock to data access 6.5[1]/7.5/9/12 ns
(max.)
• Low operating power
— Active = 195 mA (typical)
— Standby = 0.05 mA (typical)
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally
— Shorten cycle times
— Minimize bus noise
— Supported in Flow-Through and Pipelined modes
• Dual Chip Enables for easy depth expansion
• Upper and Lower Byte Controls for Bus Matching
• Automatic power-down
• Commercial and Industrial temperature ranges
• Available in 100-pin TQFP
• Pin-compatible and functionally equivalent to IDT70927
and IDT709279
Logic Block Diagram
R/WL
UBL
R/WR
UBR
CE0L
CE1L
LBL
OEL
1
0
0/1
1 CE0R
0 CE1R
0/1 LBR
OER
FT/PipeL
[2]
I/O8/9LI/O15/17L
1b 0b 1a 0a
0/1 b
a
8/9
[3]
I/O0LI/O7/8L
[4]
A0LA14/15L
CLKL
ADSL
CNTENL
CNTRSTL
8/9
15/16
Counter/
Address
Register
Decode
I/O
Control
I/O
Control
True Dual-Ported
RAM Array
0a 1a 0b 1b
a b 0/1
8/9
FT/PipeR
[2]
I/O8/9RI/O15/17R
Counter/
Address
Register
Decode
8/9
15/16
[3]
I/O0RI/O7/8R
[4]
A0RA14/15R
CLKR
ADSR
CNTENR
CNTRSTR
Notes:
1. See page 6 for Load Conditions.
2. I/O8I/O15 for x16 devices; I/O9I/O17 for x18 devices.
3. I/O0I/O7 for x16 devices. I/O0I/O8 for x18 devices.
4. A0A14 for 32K; A0A15 for 64K devices.
For the most recent information, visit the Cypress web site at www.cypress.com
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-06040 Rev. **
Revised September 19, 2001

1 page




CY7C09379 pdf
CY7C09279/89
CY7C09379/89
Electrical Characteristics Over the Operating Range
CY7C09279/89
CY7C09379/89
-6[1] -7
-9
-12
Parameter
Description
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit
VOH Output HIGH Voltage
2.4
2.4
2.4
2.4
(VCC = Min., IOH = 4.0 mA)
V
VOL Output LOW Voltage
(VCC = Min., IOH = +4.0 mA)
0.4 0.4 0.4 0.4 V
VIH Input HIGH Voltage
2.2
2.2
2.2
2.2
V
VIL Input LOW Voltage
0.8 0.8 0.8 0.8 V
IOZ
Output Leakage Current
10
10 10
10 10
10 10
10 µA
ICC
Operating Current
Coml.
250 450
235 420
215 360
195 300 mA
(VCC = Max.,
IOUT = 0 mA)
Ind.[9]
245 410
mA
Outputs Disabled
ISB1
Standby Current (Both Coml.
Ports TTL Level)[10]
CEL & CER VIH,
Ind.[9]
45 115
f = fMAX
40 105
35 95
50 110
30 85 mA
mA
ISB2
Standby Current (One Coml.
Port TTL Level)[10]
CEL | CER VIH,
Ind.[9]
175 235
160 220
145 205
160 220
125 190 mA
mA
f = fMAX
ISB3
Standby Current (Both Coml.
Ports CMOS Level)[10]
CEL & CER VCC
Ind.[9]
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5 mA
mA
0.2V, f = 0
ISB4
Standby Current (One Coml.
Port CMOS Level)[10]
CEL | CER VIH,
Ind.[9]
160 200
f = fMAX
145 185
130 170
145 185
110 150 mA
mA
Capacitance
Parameter
Description
Test Conditions
Max.
Unit
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
10 pF
10 pF
Note:
10. CEL and CER are internal signals. To select either the left or right port, both CE0 AND CE1 must be asserted to their active states (CE0 VIL and CE1 VIH).
Document #: 38-06040 Rev. **
Page 5 of 18

5 Page





CY7C09379 arduino
CY7C09279/89
CY7C09379/89
Switching Waveforms (continued)
Flow-Through Read-to-Write-to-Read (OE = VIL)[15, 17, 24, 25]
tCYC1
tCH1
tCL1
CLK
CE0
tSC
tHC
CE1
R/W
tSW
ADDRESS
DATAIN
tSA
tHW
An
tHA
tCD1
An+1
tCD1
tSW tHW
An+2
An+2
tSD
Dn+2
An+3
tHD
tCD1
DATAOUT
Qn
tDC
READ
Qn+1
tCKHZ
NO
OPERATION
Flow-Through Read-to-Write-to-Read (OE Controlled)[15, 17, 24, 25]
tCYC1
tCH1
tCL1
WRITE
tCKLZ
CLK
An+4
tCD1
Qn+3
tDC
READ
CE0
tSC
CE1
R/W
tSW
ADDRESS
DATAIN
tSA
DATAOUT
OE
tHC
tSW tHW
tHW
An An+1
An+2
An+3
tHA
tCD1
tSD tHD
tDC Dn+2
Dn+3
Qn
tOHZ
READ
WRITE
An+4
An+5
tOE
tCD1
tCKLZ
tCD1
Qn+4
tDC
READ
Document #: 38-06040 Rev. **
Page 11 of 18

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