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Número de pieza | STP16N10L | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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N - CHANNEL 100V - 0.14 Ω - 16A - TO-220
POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STP16N10L
100 V < 0.16 Ω 16 A
s TYPICAL RDS(on) = 0.14 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dV/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
March 1999
Value
100
100
± 15
16
11
64
90
0.4
0.6
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
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1 page STP16N10L
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STP16N10L | N-CHANNEL Power MOSFET | ST Microelectronics |
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