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Número de pieza | STP16NF06LFP | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP16NF06LFP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! STP16NF06L
STP16NF06LFP
N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STP16NF06L
STP60NF06LFP
60 V
60 V
<0.09 Ω
<0.09 Ω
s TYPICAL RDS(on) = 0.07Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100 oC
s LOW THRESHOLD DRIVE
ID
16 A
11 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
August 2002
.
STP16NF06L
16
11
64
45
0.3
--------
Value
STP16NF06LFP
60
60
± 16
11(*)
7.5(*)
44(*)
25
0.17
23
127
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(1) ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
1/9
1 page Gate Charge vs Gate-source Voltage
Capacitance Variations
STP16NF06L/FP
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STP16NF06LFP.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP16NF06LFP | N-CHANNEL Power MOSFET | ST Microelectronics |
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