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Número de pieza | STP16NE06L | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP16NE06L (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! STP16NE06L
STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE
SINGLE FEATURE SIZE™ POWER MOSFET
T Y PE
ST P16NE06L
ST P16NE06LFP
VDSS
60 V
60 V
RDS(on)
< 0.12 Ω
< 0.12 Ω
ID
16 A
11 A
TARGET DATA
s TYPICAL RDS(on) = 0.09 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Volt age (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation W ithst and Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Un it
STP16NE06L STP16NE06LFP
60 V
60 V
± 15
V
16 11 A
10 7 A
64 64 A
60 30 W
0.4 0.2 W/oC
2000
V
6
-65 to 175
175
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
October 1997
1/7
1 page DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
STP16NE06L/FP
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STP16NE06L.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP16NE06 | N-CHANNEL Power MOSFET | ST Microelectronics |
STP16NE06FP | N-CHANNEL Power MOSFET | ST Microelectronics |
STP16NE06FP | N-CHANNEL Power MOSFET | ST Microelectronics |
STP16NE06L | N-CHANNEL Power MOSFET | ST Microelectronics |
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