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부품번호 | AP03N70P 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Technology | ||
로고 | |||
Advanced Power
Electronics Corp.
AP03N70P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
G
S
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
BVDSS 600/650/700V
RDS(ON)
3.6Ω
ID 3.3A
G
D
S
TO-220
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-
AC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
- /A/H
Rating
600/650/700
± 30
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
62
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200303032
AP03N70P
3.5
3
2.5
2
1.5
1
0.5
0
25
50 75 100 125
T c , Case Temperature ( o C )
150
Fig 5. Maximum Drain Current v.s.
Case Temperature
50
40
30
20
10
0
0 50 100 150
Tc , Case Temperature( o C)
Fig 6. Typical Power Dissipation
100
10
1
0
T c =25 o C
Single Pulse
0
1 10
100
V DS (V)
10us
100us
1ms
10ms
100ms
1000
10000
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP03N70F | N-CHANNEL ENHANCEMENT MODE | Advanced Power Electronics |
AP03N70H | N-CHANNEL ENHANCEMENT MODE | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |