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PDF BLA0912-250 Data sheet ( Hoja de datos )

Número de pieza BLA0912-250
Descripción Avionics LDMOS transistor
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BLA0912-250
Avionics LDMOS transistor
Rev. 02 — 22 July 2004
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
1.2 Features
s High power gain
s Easy power control
s Excellent ruggedness
s Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
s Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
1.4 Quick reference data
Table 1: Quick reference data
Typical RF performance measured in common source class-AB circuit at PL = 250 W and 960 MHz to 1215 MHz frequency
band. Th = 25 °C; Zth = 0.15 K/W; unless specified otherwise.
Mode of operation
Conditions
VDS PL Gp Gp ηD Pulse droop tr tf Zth(j-h) ϕR
(V) (W) (dB) (dB) (%) (dB)
(ns) (ns) (K/W) (deg)
All modes
tp = 100 µs; δ = 10 % 36 250 13.5 0.8 50 0.1
25 6 0.18 ±5
TCAS:
tp = 32 µs; δ = 0.1 % 36 250 14.0 0.8 50 0
1030 MHz to 1090 MHz
25 6 0.07 ±5
Mode-S:
1030 MHz to 1090 MHz
JTIDS:
960 MHz to 1215 MHz
tp = 128 µs; δ = 2 %
tp = 340 µs; δ = 1 %
tp = 3.3 ms; δ = 22 %
36
36
36
250 13.5 0.8
250 13.5 0.8
200 13.0 1.2
50
50
45
0.1
0.2
0.2
25 6
25 6
25 6
0.15 ±5
0.20 ±5
0.45 ±5

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BLA0912-250 pdf
Philips Semiconductors
BLA0912-250
Avionics LDMOS transistor
300
250
PL
(W)
200
150
(5)
001aab080
(2)
(1)
(4)
(3)
60
50
ηD
(%)
40
30
(5)
(1)
001aab081
(4)
(2)
(3)
100 20
50 10
0
0 2 4 6 8 10 12 14 16
Pi (W)
Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB;
tp = 100 µs; δ = 10 %.
(1) f = 960 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
Fig 3. Load power as function of input power; typical
values.
0
0 50 100 150 200 250 300
PL (W)
Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB;
tp = 100 µs; δ = 10 %.
(1) f = 960 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
Fig 4. Efficiency as function of load power; typical
values.
9397 750 13275
Product data sheet
Rev. 02 — 22 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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BLA0912-250 arduino
Philips Semiconductors
BLA0912-250
Avionics LDMOS transistor
10. Data sheet status
Level Data sheet status [1] Product status [2] [3]
I Objective data
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Contact information
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 13275
Product data sheet
Rev. 02 — 22 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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