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부품번호 | KRC870E 기능 |
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기능 | (KRC866E - KRC872E) EPITAXIAL PLANAR NPN TRANSISTOR | ||
제조업체 | Korea Electronics | ||
로고 | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
TYPE NO.
KRC866E
KRC867E
KRC868E
KRC869E
KRC870E
KRC871E
KRC872E
R1(k )
1
2.2
2.2
4.7
10
47
100
R2(k )
10
2.2
10
10
4.7
10
100
KRC866E~KRC872E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
PP
P5
1. Q1 COMMON (EMITTER)
2. Q1 IN (BASE)
3. Q2 OUT (COLLECTOR)
4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1
Q2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRC866E~872E
KRC866E
KRC867E
KRC868E
KRC869E
KRC870E
KRC871E
KRC872E
KRC866E~872E
SYMBOL
VO
VI
IO
PD *
Tj
Tstg
MARK SPEC
TYPE KRC866E KRC867E KRC868E KRC869E KRC870E KRC871E KRC872E
MARK
N2
N4
N5
N6
N7
N8
N9
2002. 7. 10
Revision No : 2
12 3
RATING
50
10, -5
12, -10
12,-5
20, -7
30, -10
40, -15
40, -10
100
200
150
UNIT
V
V
mA
mW
-55 150
Marking
65
Type Name
4
1 23
1/6
KRC866E~KRC872E
KRC868E
100
50
30
I O - V I(ON)
10
5
3
1
0.5
0.3
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
0.3 1
VO =0.2V
3 10
INPUT ON VOLTAGE VI(ON) (V)
KRC869E
100
50
30
I O - V I(ON)
10
5
3
1
0.5
0.3
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
0.3 1
VO =0.2V
3 10
INPUT ON VOLTAGE V I(ON) (V)
KRC868E
3k
I O - V I(OFF)
1k
500
300
100
50
30
0
VO =5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
INPUT OFF VOLTAGE V I(OFF) (V)
KRC869E
3k
I O - V I(OFF)
1k
500
300
100
50
VO =5V
30
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INPUT OFF VOLTAGE V I(OFF) (V)
KRC868E
200
GI - IO
100
50
30
10
1
Ta=100 C
Ta=25 C
Ta=-25 C
VO =5V
3 10 30 100
OUTPUT CURRENT IO (mA)
2002. 7. 10
Revision No : 2
KRC869E
200
GI - IO
100
50
Ta=100 C
Ta=25 C
Ta=-25 C
30
10
1
VO =5V
3 10 30 100
OUTPUT CURRENT IO (mA)
4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ KRC870E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
KRC870E | (KRC866E - KRC872E) EPITAXIAL PLANAR NPN TRANSISTOR | Korea Electronics |
KRC870U | (KRC866U - KRC872U) EPITAXIAL PLANAR NPN TRANSISTOR | Korea Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |