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EM512D16 데이터시트 PDF




NanoAmp Solutions에서 제조한 전자 부품 EM512D16은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 EM512D16 자료 제공

부품번호 EM512D16 기능
기능 512K x 16-Bit Ultra-Low Power Asynchronous SRAM
제조업체 NanoAmp Solutions
로고 NanoAmp Solutions 로고


EM512D16 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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EM512D16 데이터시트, 핀배열, 회로
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM512D16
Advance Information
EM512D16
512Kx16 bit Ultra-Low Power Asynchronous Static RAM
Overview
The EM512D16 is an integrated memory device
containing a low power 8 Mbit Static Random
Access Memory organized as 524,288 words by 16
bits. The base design is the same as NanoAmp’s
standard low voltage version, EM512W16. The
device is fabricated using NanoAmp’s advanced
CMOS process and high-speed/ultra low-power/
low-voltage circuit technology. The device pinout is
compatible with other standard 512K x 16 SRAMs.
The device is designed such that a creative user
can improve system power and performance
parameters through use of it’s unique page mode
operation.
FIGURE 1: Pin Configuration
1
A LB
23456
OE A0 A1 A2 CE2
B I/O 8 U B A 3 A 4 CE1 I/O 0
C I/O 9 I/O10 A 5
A 6 I/O 1 I/O 2
D VS S I/O11 A 17 A 7 I/O 3 VCC
E VCCQ I/O12 N C A 16 I/O 4 VS S
F I/O14 I/O13 A 14 A 15 I/O 5 I/O 6
G I/O15 N C A 12 A 13 WE I/O 7
H A18 A8 A9 A10 A11 NC
48 Pin BGA (top)
Features
• Dual Voltage for Optimum Performance:
Vccq - 2.3 to 3.6 Volts
Vcc - 1.7 to 2.2 Volts
• Extended Temperature Range:
-40 to +85 oC
• Fast Cycle Time:
Random Access < 70 ns
Page Mode < 25 ns
• Very Low Operating Current:
ICC < 5 mA typical at 2V, 10 Mhz
• Very Low Standby Current:
ISB < 2 uA @ 55 oC
• 16 Word Fast Page-Mode Operation
• 48-Pin BGA or Known Good Die available
TABLE 1: Pin Descriptions
Pin Name
A0-A 18
WE
CE1, CE2
OE
UB
LB
I/O0-I/O 15
VCC
VCCQ
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Inputs
Output Enable Input
Upper Byte Enable Input
Lower Byte Enable Input
Data Inputs/Outputs
Power
Power I/O pins only
Ground
Not Connected
FIGURE 1: Typical Operating Envelope (Serial R/W Mix)
12.5
10.0
7.5
2.0 Volts
5.0
2.5
0.0
0
Stock No. 23144-B 3/01
2.5 5.0 7.5 10.0
Operating Frequency (Mhz)
12.5
Advance - Subject to Change Without Notice
15.0
1




EM512D16 pdf, 반도체, 판매, 대치품
NanoAmp Solutions, Inc.
EM512D16
Advance Information
TABLE 6: Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Operating Temperature
TABLE 7: Timing
Item
Symbol
Read Cycle Time
Address Access Time (Random Access)
Address Access Time (Word Mode)
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
tRC
tAA
tAAW
tC O
tO E
tLB, tUB
tLZ
tOLZ
tLBZ, tUBZ
tHZ
tOHZ
tLBHZ, tUBHZ
tOH
tWC
tCW
tAW
tLBW, tUBW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
0.1V CC to 0.9 VCC
5ns
0.5 VCC
-40 to +85 oC
VCCQ = 2.3 - 3.6 V
Min.
Max.
85
85
85
85
30
85
10
5
10
0 20
0 20
0 20
10
85
50
40
50
40
0
0
20
40
0
5
VCCQ = 2.7 - 3.6 V
Min.
Max.
70
70
70
70
25
70
10
5
10
0 20
0 20
0 20
10
70
50
40
50
40
0
0
20
40
0
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23144-B 3/01
Advance - Subject to Change Without Notice
4

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EM512D16 전자부품, 판매, 대치품
NanoAmp Solutions, Inc.
FIGURE 7: Timing Waveform of Write Cycle (1) (WE control)
tWC
Address
tAW tWR
CE1
tCW
CE2
tLBW, tUBW
LB, UB
tAS tWP
WE
Data In
Data Out
High-Z
tWHZ
tDW tDH
Data Valid
tOW
High-Z
FIGURE 8: Timing Waveform of Write Cycle (2) (CE1 Control)
tWC
Address
CE1
(for CE2 Control, use
inverted signal)
LB, UB
tAW
tCW
tAS
tLBW, tUBW
tWR
tW P
WE
tDW tDH
Data In
Data Out
Data Valid
tLZ
tWHZ
High-Z
Stock No. 23144-B 3/01
Advance - Subject to Change Without Notice
EM512D16
Advance Information
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관련 데이터시트

부품번호상세설명 및 기능제조사
EM512D16

512K x 16-Bit Ultra-Low Power Asynchronous SRAM

NanoAmp Solutions
NanoAmp Solutions

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