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PDF STP20N06FI Data sheet ( Hoja de datos )
| Número de pieza | STP20N06FI | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP20N06
STP20N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP20N06
STP20N06FI
VDSS
60 V
60 V
R DS( on)
< 0.085 Ω
< 0.085 Ω
ID
20 A
13 A
s TYPICAL RDS(on) = 0.06 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
Val ue
STP20N06
ST P2 0N 06 F I
60
60
± 20
20 13
14 9
80 80
80 35
0. 53
0. 23
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
1 page  
Transconductance
STP20N06/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP20N06FI.PDF ] | |
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