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PDF VUO52 Data sheet ( Hoja de datos )

Número de pieza VUO52
Descripción Three Phase Rectifier Bridge
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! VUO52 Hoja de datos, Descripción, Manual

Three Phase
Rectifier Bridge
VUO 52
IdAVM = 55 A
VRRM = 800-1800 V
V
RSM
V
900
1300
1500
1700
1900
V
RRM
V
800
1200
1400
1600
1800
Type
VUO 52-08NO1
VUO 52-12NO1
VUO 52-14NO1
VUO 52-16NO1
VUO 52-18NO1
10
8
6
1/2 4 5
12
10
4/5 8
6
Symbol
IdAV
I
dAV
IdAVM
I
FSM
I2t
TVJ
TVJM
Tstg
VISOL
Md
Weight
Symbol
IR
VF
VT0
rT
RthJH
dS
d
A
a
Test Conditions
TK = 90°C, module
T
A
=
45°C
(R = 0.5 K/W), module
thKA
module
T
VJ
=
45°C;
VR = 0
TVJ = TVJM
VR = 0
TVJ = 45°C
V =0
R
TVJ = TVJM
V =0
R
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50/60 Hz, RMS
IISOL £ 1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
(10-32UNF)
Maximum Ratings
54 A
43 A
55 A
350 A
375 A
305 A
325 A
615 A2s
590 A2s
465 A2s
445 A2s
-40...+130
130
-40...+125
°C
°C
°C
3000
3600
V~
V~
2 - 2.5
18-22
35
Nm
lb.in.
g
Test Conditions
VR = VRRM
V =V
R RRM
TVJ = 25°C
T =T
VJ VJM
IF = 55 A;
TVJ = 25°C
For power-loss calculations only
per diode, 120° rect.
per module, 120° rect.
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Characteristic Values
£ 0.3 mA
£ 5 mA
£ 1.46 V
0.8 V
12.5 mW
1.5 K/W
0.25 K/W
12.7 mm
9.4 mm
50 m/s2
Features
q Package with DCB ceramic base plate
q Isolation voltage 3600 V~
q Planar passivated chips
q Blocking voltage up to 1800 V
q Low forward voltage drop
q Leads suitable for PC board soldering
q UL registered E72873
Applications
q Supplies for DC power equipment
q Input rectifiers for PWM inverter
q Battery DC power supplies
q Field supply for DC motors
Advantages
q Easy to mount with two screws
q Space and weight savings
q Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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