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PDF SST39VF3201 Data sheet ( Hoja de datos )
| Número de pieza | SST39VF3201 | |
| Descripción | 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus | |
| Fabricantes | Silicon Storage Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SST39VF3201 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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A Microchip Technology Company
Not recommended for new designs. Please use SST39VF1601C
and SST39VF3201B.
16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201
SST39VF1602 / SST39VF3202
Not Recommended for New Designs
The SST39VF1601/1602 and SST39VF3201/3202 devices are 1M x16 and 2M
x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with
SST's proprietary, high performance CMOS SuperFlash technology. The split-
gate cell design and thick-oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches. The SST39VF1601/1602/
3201/3202 write (Program or Erase) with a 2.7-3.6V power supply. These devices
conforms to JEDEC standard pinouts for x16 memories.
Features
• Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF1602/3202
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
• All devices are RoHS compliant
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25028A
08/11
1 page  
A Microchip Technology Company
16 Mbit / 32 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201
SST39VF1602 / SST39VF3202
Not Recommended for New Designs
Table 1: Pin Description
Symbol Pin Name
Functions
AMS1-A0
Address Inputs
To provide memory addresses.
During Sector-Erase AMS-A11 address lines will select the sector.
During Block-Erase AMS-A15 address lines will select the block.
DQ15-DQ0 Data Input/output To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
WP#
Write Protect
To protect the top/bottom boot block from Erase/Program operation when
grounded.
RST#
Reset
To reset and return the device to Read mode.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
VDD Power Supply To provide power supply voltage: 2.7-3.6V
VSS Ground
NC No Connection Unconnected pins.
1. AMS = Most significant address
AMS = A19 for SST39VF1601/1602, and A20 for SST39VF3201/3202
T1.2 25028
©2011 Silicon Storage Technology, Inc.
5
DS25028A
08/11
5 Page 
A Microchip Technology Company
16 Mbit / 32 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201
SST39VF1602 / SST39VF3202
Operations
Not Recommended for New Designs
Table 5: Operation Modes Selection
Mode
Read
Program
Erase
CE#
VIL
VIL
VIL
OE#
VIL
VIH
VIH
WE#
VIH
VIL
VIL
DQ
DOUT
DIN
X1
Standby
Write Inhibit
Product Identification
Software Mode
VIH X
X VIL
XX
VIL VIL
1. X can be VIL or VIH, but no other value.
X High Z
X High Z/ DOUT
VIH High Z/ DOUT
VIH
Address
AIN
AIN
Sector or block address,
XXH for Chip-Erase
X
X
X
See Table 6
T5.0 25028
Table 6: Software Command Sequence
Command
Sequence
1st Bus
2nd Bus
3rd Bus
4th Bus
5th Bus
6th Bus
Write Cycle Write Cycle Write Cycle Write Cycle Write Cycle Write Cycle
Addr1 Data2 Addr1 Data2 Addr1 Data2 Addr1 Data2 Addr1 Data2 Addr1 Data2
Word-Program 5555H AAH 2AAAH 55H 5555H A0H WA3 Data
Sector-Erase
5555H AAH 2AAAH 55H 5555H 80H 5555 AAH 2AAAH 55H SAX4 30H
H
Block-Erase
5555H AAH 2AAAH 55H 5555H 80H 5555 AAH 2AAAH 55H BAX4 50H
H
Chip-Erase
5555H AAH 2AAAH 55H 5555H 80H 5555 AAH 2AAAH 55H 5555 10H
HH
Erase-Suspend
XXXX B0H
H
Erase-Resume
XXXX 30H
H
Query Sec ID5
5555H AAH 2AAAH 55H 5555H 88H
User Security ID 5555H AAH 2AAAH 55H 5555H A5H WA6 Data
Word-Program
User Security ID 5555H AAH 2AAAH 55H 5555H 85H XXH6 0000
Program Lock-Out
H
Software ID
Entry7,8
5555H AAH 2AAAH 55H 5555H 90H
CFI Query Entry 5555H AAH 2AAAH 55H 5555H 98H
Software ID
Exit9,10/CFI Exit/
Sec ID Exit
5555H AAH 2AAAH 55H 5555H F0H
Software ID
Exit9,10
/CFI Exit/Sec ID
Exit
XXH F0H
1. Address format A14-A0 (Hex).
Addresses A15-A19 can be VIL or VIH, but no other value, for Command sequence for SST39VF1601/1602,
Addresses A15-A20 can be VIL or VIH, but no other value, for Command sequence for SST39VF3201/3202,
T6.6 25028
©2011 Silicon Storage Technology, Inc.
11
DS25028A
08/11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet SST39VF3201.PDF ] | |
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