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부품번호 TE28F160C3 기능
기능 (TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory
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TE28F160C3 데이터시트, 핀배열, 회로
3 Volt Intel® Advanced+ Boot Block
Flash Memory
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Preliminary Datasheet
Product Features
s Flexible SmartVoltage Technology
s 128-bit Protection Register
— 2.7 V–3.6 V Read/Program/Erase
— 64-bit Unique Device Identifier
— 12 V for Fast Production Programming
— 64-bit User Programmable OTP Cells
s 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option s Extended Cycling Capability
— Reduces Overall System Power
s High Performance
— 2.7 V–3.6 V: 70 ns Max Access Time
s Optimized Architecture for Code Plus Data
Storage
— Minimum 100,000 Block Erase Cycles
s Supports Intel® Flash Data Integrator
Software
— Flash Memory Manager
— System Interrupt Manager
— Eight 4-Kword Blocks, Top or Bottom
— Supports Parameter Storage, Streaming
Locations
Data (e.g., voice)
— Up to One Hundred-Twenty-Seven 32- s Automated Word/Byte Program and Block
Kword Blocks
Erase
— Fast Program Suspend Capability
— Command User Interface
— Fast Erase Suspend Capability
— Status Registers
s Flexible Block Locking
— Lock/Unlock Any Block
s Cross-Compatible Command Support
— Intel Basic Command Set
— Full Protection on Power-Up
— Common Flash Interface
— WP# Pin for Hardware Block Protection
— VPP = GND Option
— VCC Lockout Voltage
s Low Power Consumption
— 9 mA Typical Read Power
s
s
Standard Surface Mount Packaging
— 48-Ball CSP Packages
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
ETOX™ VII (0.18 µ) Flash Technology
— 7 µ A Typical Standby Power with
— 28F160/320/640C3xC
Automatic Power Savings Feature
— 8-, 16- and 32-Mbit also exist on
s 12 V Fast Production Program
s Extended Temperature Operation
ETOX™ VI (0.25 µ) Flash Technology
— –40 °C to +85 °C
The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ
technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+
Boot Block Flash memory devices incorporate low voltage capability (2.7 V read, program and
erase) with high-speed, low-power operation. Flexible block locking allows any block to be
independently locked or unlocked. Add to this the Intel® Flash Data Integrator (IFDI) software
and you have a cost-effective, flexible, monolithic code plus data storage solution. Intel® 3 Volt
Advanced+ Boot Block products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball
mEasy BGA packages. Additional information on this product family can be obtained by
oaccessing the Intel® Flash website: http://www.intel.com/design/flash.
t4u.cNotice: This document contains preliminary information on new products in production. The
e specifications are subject to change without notice. Verify with your local Intel sales office that
e you have the latest datasheet before finalizing a design.
tash Order Number: 290645-011
www.da August 2001




TE28F160C3 pdf, 반도체, 판매, 대치품
28F320W30, 28F3204W30, 28F6408W30, 28F640W30
4.0 Electrical Specifications........................................................................................ 25
4.1 Absolute Maximum Ratings ................................................................................ 25
4.2 Operating Conditions .......................................................................................... 26
4.3 Capacitance ........................................................................................................ 26
4.4 DC Characteristics .............................................................................................. 27
4.5 AC Characteristics—Read Operations................................................................ 30
4.6 AC Characteristics—Write Operations ................................................................ 35
4.7 Erase and Program Timings ............................................................................... 39
4.8 Reset Operations ................................................................................................ 41
5.0 Ordering Information .............................................................................................. 42
6.0 Additional Information ........................................................................................... 43
Appendix A WSM Current/Next States................................................................................ 44
Appendix B Program/Erase Flowcharts ............................................................................. 46
Appendix C Common Flash Interface Query Structure ............................................... 52
Appendix D
Appendix E
Appendix F
Architecture Block Diagram ........................................................................... 59
Word-Wide Memory Map Diagrams............................................................. 60
Device ID Table .................................................................................................... 64
Appendix G Protection Register Addressing ................................................................... 65
iv Preliminary

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TE28F160C3 전자부품, 판매, 대치품
28F800C3, 28F160C3, 28F320C3, 28F640C3
1.0 Introduction
This document contains the specifications for the 3 Volt Advanced+ Boot Block flash memory
family. These flash memories add features which can be used to enhance the security of systems:
instant block locking and a protection register.
This family of products features 1.65 V – 2.5 V or 2.7 V–3.6 V I/Os and a low VCC/VPP operating
range of 2.7 V–3.6 V for read, program, and erase operations. In addition this family is capable of
fast programming at 12 V. Throughout this document, the term “2.7 V” refers to the full voltage
range 2.7 V–3.6 V (except where noted otherwise) and “VPP = 12 V” refers to 12 V ±5%. Section
1.0 and Section 2.0 provide an overview of the flash memory family including applications,
pinouts, pin descriptions and memory organization. Section 3.0 describes the operation of these
products, with Section 4.0 providing the operating specifications. Ordering information is outlined
in Section 5.0, and additional reference material is located in Section 6.0.
The 3 Volt Advanced+ Boot Block flash memory features:
Zero-latency, flexible block locking
128-bit Protection Register
Simple system implementation for 12 V production programming with 2.7 V in-field
programming
Ultra-low power operation at 2.7 V
VCCQ input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and
VCCQ location
Minimum 100,000 block erase cycles
Common Flash Interface for software query of device specs and features
Table 1. 3 Volt Advanced+ Boot Block Feature Summary
Feature
VCC Operating Voltage
VPP Voltage
VCCQ I/O Voltage
Bus Width
Speed (ns)
Blocking (top or bottom)
Operating Temperature
Program/Erase Cycling
Packages
Block Locking
Protection Register
8 Mbit(1), 16 Mbit, 32 Mbit(2)
2.7 V – 3.6 V(3)
Provides complete write protection with optional 12 V Fast Programming
1.65 V – 2.5 V or 2.7 V – 3.6 V
16-bit
8 Mbit: 90, 110 @ 2.7 V and 80, 100 @ 3.0 V
16 Mbit: 70, 80, 90, 110 @ 2.7 V and 70, 80, 100 @ 3.0 V
32 Mbit: 70, 90, 100, 110 @ 2.7 V and 70, 90, 100 @ 3.0 V
64 Mbit: 90, 100 @ 2.7 V and 90, 100 @ 3.0 V
8 x 4-Kword parameter
8-Mb: 15 x 32-Kword main
16-Mb: 31 x 32-Kword main
32-Mb: 63 x 32-Kword main
64-Mb: 127 x 32-Kword main
Extended: –40 °C to +85 °C
100,000 cycles
48-Lead TSOP
48-Ball µBGA* CSP (1), 48-Ball VF BGA, Easy BGA
Flexible locking of any block with zero latency
64-bit unique device number, 64-bit user programmable
Reference
Table 9
Table 9
Table 3
Section 4.4
Appendix 2.2
Appendix E
Table 9
Table 9
Figure 1, 2 and 3
Section 3.3
Section 3.4
Preliminary
1

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관련 데이터시트

부품번호상세설명 및 기능제조사
TE28F160C3

(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory

Intel Corporation
Intel Corporation
TE28F160C3

(TE28FxxxC3) Boot Block Flash Memory

Intel
Intel

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