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부품번호 | MC33152 기능 |
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기능 | (MC34152 / MC33152) HIGH SPEED DUAL MOSFET DRIVERS | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 10 페이지수
High Speed Dual
MOSFET Drivers
The MC34152/MC33152 are dual noninverting high speed drivers
specifically designed for applications that require low current digital signals to
drive large capacitive loads with high slew rates. These devices feature low
input current making them CMOS/LSTTL logic compatible, input hysteresis
for fast output switching that is independent of input transition time, and two
high current totem pole outputs ideally suited for driving power MOSFETs.
Also included is an undervoltage lockout with hysteresis to prevent system
erratic operation at low supply voltages.
Typical applications include switching power supplies, dc–to–dc
converters, capacitor charge pump voltage doublers/inverters, and motor
controllers.
This device is available in dual–in–line and surface mount packages.
• Two Independent Channels with 1.5 A Totem Pole Outputs
• Output Rise and Fall Times of 15 ns with 1000 pF Load
• CMOS/LSTTL Compatible Inputs with Hysteresis
• Undervoltage Lockout with Hysteresis
• Low Standby Current
• Efficient High Frequency Operation
• Enhanced System Performance with Common Switching Regulator
Control ICs
Order this document by MC34152/D
MC34152
MC33152
HIGH SPEED
DUAL MOSFET DRIVERS
SEMICONDUCTOR
TECHNICAL DATA
P SUFFIX
PLASTIC PACKAGE
CASE 626
8
1
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
8
1
Representative Diagram
VCC 6
+
–
5.7V
Logic
Input A 2
Drive Output A
7
100k
PIN CONNECTIONS
N.C. 1
Logic Input A 2
Gnd 3
Logic Input B 4
8 N.C.
7 Drive Output A
6 VCC
5 Drive Output B
(Top View)
Logic
Input B 4
Gnd 3
MOTOROLA ANALOG IC DEVICE DATA
Drive Output B
5
100k
ORDERING INFORMATION
Device
MC34152D
MC34152P
Operating
Temperature Range
TA = 0° to +70°C
Package
SO–8
Plastic DIP
MC33152D
SO–8
TA = – 40° to + 85°C
MC33152P
Plastic DIP
© Motorola, Inc. 1996
Rev 0
1
90% –
10% –
MC34152 MC33152
Figure 7. Propagation Delay
VCC = 12 V
Vin = 0 V to 5.0 V
CL = 1.0 nF
TA = 25°C
Drive Output
Figure 8. Drive Output Clamp Voltage
versus Clamp Current
3.0 High State Clamp (Drive
Output Driven Above VCC)
2.0
1.0
VCC = 12 V
80 µs Pulsed Load
120 Hz Rate
TA = 25°C
VCC
0
Logic Input
50 ns/DIV
0
–1.0
0
Low State Clamp (Drive
Gnd Output Driven Below Ground)
0.2 0.4 0.6 0.8 1.0 1.2
IO, OUTPUT CLAMP CURRENT (A)
1.4
0
–1.0
– 2.0
– 3.0
3.0
2.0
1.0
0
0
Figure 9. Drive Output Saturation Voltage
versus Load Current
VCC
Source Saturation VCC = 12 V
(Load to Ground) 80 µs Pulsed Load
120 Hz Rate
TA = 25°C
Sink Saturation
(Load to VCC)
Gnd
0.2 0.4 0.6 0.8 1.0 1.2 1.4
IO, OUTPUT CLAMP CURRENT (A)
Figure 10. Drive Output Saturation Voltage
versus Temperature
0
– 0.5
Source Saturation
(Load to Ground) VCC
– 0.7 VCC = 12 V
– 0.9
–1.1
Isource = 10 mA
Isource = 400 mA
1.9
1.7 Isink = 400 mA
1.5
1.0
0.8 Isink = 10 mA
0.6
Sink Saturation
(Load to VCC)
Gnd
0– 55 – 25
0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 11. Drive Output Rise Time
90% –
10% –
4
VCC = 12 V
Vin = 0 V to 5.0 V
CL = 1.0 nF
TA = 25°C
10 ns/DIV
Figure 12. Drive Output Fall Time
90% –
VCC = 12 V
Vin = 0 V to 5.0 V
CL = 1.0 nF
TA = 25°C
10% –
10 ns/DIV
MOTOROLA ANALOG IC DEVICE DATA
4페이지 MC34152 MC33152
LAYOUT CONSIDERATIONS
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and
overshoot. Do not attempt to construct the driver circuit
on wire–wrap or plug–in prototype boards. When driving
large capacitive loads, the printed circuit board must contain
a low inductance ground plane to minimize the voltage spikes
induced by the high ground ripple currents. All high current
loops should be kept as short as possible using heavy copper
runs to provide a low impedance high frequency path. For
optimum drive performance, it is recommended that the initial
circuit design contains dual power supply bypass capacitors
connected with short leads as close to the VCC pin and
ground as the layout will permit. Suggested capacitors are a
low inductance 0.1 µF ceramic in parallel with a 4.7 µF
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely critical
and cannot be over emphasized.
Figure 18. Enhanced System Performance with
Common Switching Regulators
VCC
47 0.1
6
+
–
5.7V
2
Vin
7
TL494
or
TL594
45
Figure 19. MOSFET Parasitic Oscillations
Vin
Rg
D1
1N5819
3
The MC34152 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Series gate resistor Rg may be needed to damp high frequency parasitic oscillations
caused by the MOSFET input capacitance and any series wiring inductance in the
gate–source circuit. Rg will decrease the MOSFET switching speed. Schottky diode
D1 can reduce the driver’s power dissipation due to excessive ringing, by preventing
the output pin from being driven below ground.
Figure 20. Direct Transformer Drive
Figure 21. Isolated MOSFET Drive
7
4X
1N5819
5
3
Output Schottky diodes are recommended when driving inductive loads at high
frequencies. The diodes reduce the driver’s power dissipation by preventing the
output pins from being driven above VCC and below ground.
3
Isolation
Boundary
1N
5819
MOTOROLA ANALOG IC DEVICE DATA
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MC33151 | HIGH SPEED DUAL MOSFET DRIVERS | Motorola Semiconductors |
MC33151 | (MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS | Motorola Semiconductors |
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