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부품번호 | MC34151 기능 |
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기능 | (MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 10 페이지수
High Speed Dual
MOSFET Drivers
The MC34151/MC33151 are dual inverting high speed drivers specifically
designed for applications that require low current digital circuitry to drive
large capacitive loads with high slew rates. These devices feature low input
current making them CMOS and LSTTL logic compatible, input hysteresis for
fast output switching that is independent of input transition time, and two high
current totem pole outputs ideally suited for driving power MOSFETs. Also
included is an undervoltage lockout with hysteresis to prevent erratic system
operation at low supply voltages.
Typical applications include switching power supplies, dc to dc
converters, capacitor charge pump voltage doublers/inverters, and motor
controllers.
These devices are available in dual–in–line and surface mount packages.
• Two Independent Channels with 1.5 A Totem Pole Output
• Output Rise and Fall Times of 15 ns with 1000 pF Load
• CMOS/LSTTL Compatible Inputs with Hysteresis
• Undervoltage Lockout with Hysteresis
• Low Standby Current
• Efficient High Frequency Operation
• Enhanced System Performance with Common Switching Regulator
Control ICs
• Pin Out Equivalent to DS0026 and MMH0026
Order this document by MC34151/D
MC34151
MC33151
HIGH SPEED
DUAL MOSFET DRIVERS
SEMICONDUCTOR
TECHNICAL DATA
8
1
8
1
P SUFFIX
PLASTIC PACKAGE
CASE 626
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
Representative Block Diagram
VCC 6
Logic Input A
2
+
+
+
+
–
5.7V
+
Drive Output A
7
PIN CONNECTIONS
N.C. 1
Logic Input A 2
Gnd 3
Logic Input B 4
8 N.C.
7 Drive Output A
6 VCC
5 Drive Output B
(Top View)
Logic Input B
4
+
+
Drive Output B
5
Gnd 3
MOTOROLA ANALOG IC DEVICE DATA
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC34151D
MC34151P
TA = 0° to +70°C
SO–8
Plastic DIP
MC33151D
TA = – 40° to +85°C
MC33151P
SO–8
Plastic DIP
© Motorola, Inc. 1996
Rev 0
1
MC34151 MC33151
Figure 7. Propagation Delay
90% VCC = 12 V
Logic Input
Vin = 5 V to 0 V
CL = 1.0 nF
TA = 25°C
10% Drive Output
50 ns/DIV
Figure 8. Drive Output Clamp Voltage
versus Clamp Current
3.0 High State Clamp
(Drive Output Driven Above VCC)
2.0
1.0
VCC = 12 V
80 µs Pulsed Load
120 Hz Rate
TA = 25°C
VCC
0
0
–1.0
0
Low State Clamp
Gnd (Drive Output Driven Below Ground)
0.2 0.4 0.6 0.8 1.0 1.2
IO, OUTPUT LOAD CURRENT (A)
1.4
Figure 9. Drive Output Saturation Voltage
versus Load Current
0
–1.0
VCC
Source Saturation VCC = 12 V
(Load to Ground) 80 µs Pulsed Load
120 Hz Rate
–2.0 TA = 25°C
–3.0
3.0
2.0
1.0
Sink Saturation
(Load to VCC)
Gnd
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IO, OUTPUT LOAD CURRENT (A)
Figure 10. Drive Output Saturation Voltage
versus Temperature
0
–0.5 Source Saturation
–0.7 (Load to Ground) VCC
–0.9
–1.1
VCC = 12 V
Isource = 10 mA
Isource = 400 mA
1.9 Isink = 400 mA
1.7
1.5
1.0
0.8
0.6
0
Sink Saturation
(Load to VCC)
–55 –25 0
Isink = 10 mA
Gnd
25 50
75
TA, AMBIENT TEMPERATURE (°C)
100 125
Figure 11. Drive Output Rise Time
90%
VCC = 12 V
Vin = 5 V to 0 V
CL = 1.0 nF
10% TA = 25°C
10 ns/DIV
4
Figure 12. Drive Output Fall Time
90%
VCC = 12 V
Vin = 5 V to 0 V
CL = 1.0 nF
TA = 25°C
10%
10 ns/DIV
MOTOROLA ANALOG IC DEVICE DATA
4페이지 MC34151 MC33151
LAYOUT CONSIDERATIONS
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and
overshoot. Do not attempt to construct the driver circuit
on wire–wrap or plug–in prototype boards. When driving
large capacitive loads, the printed circuit board must contain
a low inductance ground plane to minimize the voltage spikes
induced by the high ground ripple currents. All high current
loops should be kept as short as possible using heavy copper
runs to provide a low impedance high frequency path. For
optimum drive performance, it is recommended that the initial
circuit design contains dual power supply bypass capacitors
connected with short leads as close to the VCC pin and
ground as the layout will permit. Suggested capacitors are a
low inductance 0.1 µF ceramic in parallel with a 4.7 µF
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely critical
and cannot be over emphasized.
Figure 18. Enhanced System Performance with
Common Switching Regulators
VCC
47 0.1
6
+
++ –
+ 5.7V
2
Vin
+
7
TL494
or
TL594
+
4
+
5
3
The MC34151 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Figure 20. Direct Transformer Drive
+
+
7
4X
+ 1N5819
+
5
3
Output Schottky diodes are recommended when driving inductive loads at
high frequencies. The diodes reduce the driver’s power dissipation by
preventing the output pins from being driven above VCC and below ground.
Figure 19. MOSFET Parasitic Oscillations
Vin
+
Rg
D1
1N5819
Series gate resistor Rg may be needed to damp high frequency parasitic
oscillations caused by the MOSFET input capacitance and any series
wiring inductance in the gate–source circuit. Rg will decrease the
MOSFET switching speed. Schottky diode D1 can reduce the driver’s
power dissipation due to excessive ringing, by preventing the output pin
from being driven below ground.
Figure 21. Isolated MOSFET Drive
+
3
Isolation
Boundary
1N
5819
MOTOROLA ANALOG IC DEVICE DATA
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MC34151 | (MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS | Motorola Semiconductors |
MC34151 | (MC34151 / MC33151) High Speed Dual MOSFET Drivers | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |