(PDF) TPV385 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	TPV385
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! TPV385 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV385 is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES INCLUDE: • Gold Metalization • Emitter Ballast Resistors • Internal Input Matching • Common Emitter PACKAGE STYLE 500 6L FLG MAXIMUM RATINGS IC 10 A (CONT) VCB 65 V VCE 35 V TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 1.5 °C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCEO IC = 50 mA BVCER IC = 50 mA RBE = 10 Ω BVCBO IC = 50 mA BVEBO IE = 10 mA hFE VCE = 5.0 V IC = 1.0 A MINIMUM TYPICAL MAXIMUM 35 60 65 4.0 20 100 UNITS V V V V --- Cob VCB = 30 V f = 1.0 MHz 65 85 pF GP IMD1 ψ VCE = 28 V Pout = 14 W VCE = 28 V ALL PHASEANGLES Pout = 14 W LOAD VSWR = ∝:1 f = 225 MHz f = 225 MHz 14 15 -53 NO DEGRADATION IN OUTPUT POWER dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF TPV385 Data sheet ( Hoja de datos )