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Número de pieza | STP4NB50FP | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP4NB50FP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! STP4NB50
STP4NB50FP
N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP
PowerMesh™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP4NB50
STP4NB50FP
500 V
500 V
< 2.8 Ω
< 2.8 Ω
3.8 A
2.5 A
s TYPICAL RDS(on) = 2.5 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( )
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2003
Value
STP4NB50 STP4NB50FP
500
Unit
V
500 V
±30 V
3.8 2.5 A
2.4 1.6 A
15.2
15.2
A
80
0.64
4.5
-
35
0.28
2500
W
W/°C
V/ns
V
–65 to 150
°C
150 °C
(1)ISD ≤4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/7
1 page STP4NB50 - STP4NB50FP
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STP4NB50FP.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP4NB50FP | N-CHANNEL MOSFET | ST Microelectronics |
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