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부품번호 TE28F400B3xxx 기능
기능 (TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
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TE28F400B3xxx 데이터시트, 핀배열, 회로
E
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK
4-, 8-, 16-, 32-MBIT
FLASH MEMORY FAMILY
28F400B3, 28F800B3, 28F160B3, 28F320B3
28F008B3, 28F016B3, 28F032B3
n Flexible SmartVoltage Technology
2.7 V–3.6 V Read/Program/Erase
12 V VPP Fast Production
Programming
n 2.7 V or 1.65 V I/O Option
Reduces Overall System Power
n High Performance
2.7 V–3.6 V: 90 ns Max Access Time
3.0 V–3.6 V: 80 ns Max Access Time
n Optimized Block Sizes
Eight 8-KB Blocks for Data,
Top or Bottom Locations
Up to Sixty-Three 64-KB Blocks for
Code
n Block Locking
VCC-Level Control through WP#
n Low Power Consumption
10 mA Typical Read Current
n Absolute Hardware-Protection
VPP = GND Option
VCC Lockout Voltage
n Extended Temperature Operation
–40 °C to +85 °C
n Flash Data Integrator Software
Flash Memory Manager
System Interrupt Manager
Supports Parameter Storage,
Streaming Data (e.g., Voice)
n Automated Program and Block Erase
Status Registers
n Extended Cycling Capability
Minimum 100,000 Block Erase
Cycles Guaranteed
n Automatic Power Savings Feature
Typical ICCS after Bus Inactivity
n Standard Surface Mount Packaging
48-Ball µBGA* Package
48-Lead TSOP Package
40-Lead TSOP Package
n Footprint Upgradeable
Upgrade Path for 4-, 8-, 16-, and 32-
Mbit Densities
n ETOX™ VI (0.25 µ) Flash Technology
The Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7 V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.65 V, which significantly reduces system active power and
interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a single
device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you have a cost-effective,
monolithic code plus data storage solution. Smart 3 Advanced Boot Block products will be available in 40-
lead and 48-lead TSOP and 48-ball µBGA* packages. Additional information on this product family can be
obtained by accessing Intel’s WWW page: http://www.intel.com/design/flash.
July 1998
Order Number: 290580-005




TE28F400B3xxx pdf, 반도체, 판매, 대치품
SMART 3 ADVANCED BOOT BLOCK
E
Number
-001
-002
-003
-004
-005
REVISION HISTORY
Description
Original version
Section 3.4, VPP Program and Erase Voltages, added
Updated Figure 9: Automated Block Erase Flowchart
Updated Figure 10: Erase Suspend/Resume Flowchart (added program to table)
Updated Figure 16: AC Waveform: Program and Erase Operations (updated notes)
IPPR maximum specification change from ±25 µA to ±50 µA
Program and Erase Suspend Latency specification change
Updated Appendix A: Ordering Information (included 8 M and 4 M information)
Updated Figure, Appendix D: Architecture Block Diagram (Block info. in words not
bytes)
Minor wording changes
Combined byte-wide specification (previously 290605) with this document
Improved speed specification to 80 ns (3.0 V) and 90 ns (2.7 V)
Improved 1.8 V I/O option to minimum 1.65 V (Section 3.4)
Improved several DC characteristics (Section 4.4)
Improved several AC characteristics (Sections 4.5 and 4.6)
Combined 2.7 V and 1.8 V DC characteristics (Section 4.4)
Added 5 V VPP read specification (Section 3.4)
Removed 120 ns and 150 ns speed offerings
Moved Ordering Information from Appendix to Section 6.0; updated information
Moved Additional Information from Appendix to Section 7.0
Updated figure Appendix B, Access Time vs. Capacitive Load
Updated figure Appendix C, Architecture Block Diagram
Moved Program and Erase Flowcharts to Appendix E
Updated Program Flowchart
Updated Program Suspend/Resume Flowchart
Minor text edits throughout.
Added 32-Mbit density
Added 98H as a reserved command (Table 4)
A1–A20 = 0 when in read identifier mode (Section 3.2.2)
Status register clarification for SR3 (Table 7)
VCC and VCCQ absolute maximum specification = 3.7 V (Section 4.1)
Combined IPPW and ICCW into one specification (Section 4.4)
Combined IPPE and ICCE into one specification (Section 4.4)
Max Parameter Block Erase Time (tWHQV2/tEHQV2) reduced to 4 sec (Section 4.7)
Max Main Block Erase Time (tWHQV3/tEHQV3) reduced to 5 sec (Section 4.7)
Erase suspend time @ 12 V (tWHRH2/tEHRH2) changed to 5 µs typical and 20 µs
maximum (Section 4.7)
Ordering Information updated (Section 6.0)
Write State Machine Current/Next States Table updated (Appendix A)
Program Suspend/Resume Flowchart updated (Appendix F)
Erase Suspend/Resume Flowchart updated (Appendix F)
Text clarifications throughout
µBGA package diagrams corrected (Figures 3 and 4)
IPPD test conditions corrected (Section 4.4)
32-Mbit ordering information corrected (Section 6)
µBGA package top side mark information added (Section 6)
4 PRELIMINARY

4페이지










TE28F400B3xxx 전자부품, 판매, 대치품
E
SMART 3 ADVANCED BOOT BLOCK
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
1 40 A17
2 39 GND
3 38 A20 16 M
4
5
37
36
A19
A10
8M
6 35 DQ7
7 34 DQ6
8 Advanced Boot Block 33 DQ5
9
40-Lead TSOP
32 DQ4
10 10 mm x 20 mm 31 VCCQ
11 30 VCC
12
13
TOP VIEW
29 NC
28 DQ3
14 27 DQ2
15 26 DQ1
16 25 DQ0
17 24 OE#
18 23 GND
19 22 CE#
20 21 A0
NOTES:
1. 40-Lead TSOP available for 8- and 16-Mbit densities only.
2. Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pin 38.
0580_01
Figure 1. 40-Lead TSOP Package for x8 Configurations
32 M
16 M
8M
4M
A15
A14
A13
A12
A11
A10
A9
A8
NC
A20
WE#
RP#
VPP
WP#
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Advanced Boot Block
48-Lead TSOP
12 mm x 20 mm
TOP VIEW
48 A16
47 VCCQ
46 GND
45 DQ15
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 VCC
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE#
27 GND
26 CE#
25 A0
NOTE:
Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pins 9 and 15.
0580_02
Figure 2. 48-Lead TSOP Package for x16 Configurations
PRELIMINARY
7

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부품번호상세설명 및 기능제조사
TE28F400B3xxx

(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY

Intel
Intel
TE28F400B3xxx

(TE28F Series) 3 Volt Advanced Boot Block Flash Memory

Intel Corporation
Intel Corporation

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