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부품번호 | HN58X25256I 기능 |
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기능 | (HN58X25128I / HN58X25256I) EEPROM | ||
제조업체 | Renesas Technology | ||
로고 | |||
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
HN58X25128I/HN58X25256I
• Small size packages: SOP-8pin and TSSOP-14pin
• Shipping tape and reel
TSSOP-14pin : 2,000 IC/reel
SOP-8pin : 2,500 IC/reel
• Temperature range: −40 to +85 °C
Ordering Information
Type No.
Internal organization Operating voltage Frequency
HN58X25128FPI 128-kbit (16834 × 8-bit) 1.8 V to 5.5 V
5 MHz
(2.5 V to 5.5 V)
HN58X25256FPI 256-kbit (32768 × 8-bit)
3 MHz
(1.8 V to 5.5 V)
HN58X25128TI 128-kbit (16834 × 8-bit) 1.8 V to 5.5 V
5 MHz
(2.5 V to 5.5 V)
HN58X25256TI 256-kbit (32768 × 8-bit)
3 MHz
(1.8 V to 5.5 V)
Package
150mil 8-pin plastic
SOP (FP-8DB)
14-pin plastic
TSSOP (TTP-14D)
Rev.0.0, Nov. 2002, page 2 of 27
4페이지 HN58X25128I/HN58X25256I
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*1
VCC
VIN
Topr
–0.6 to + 7.0
–0.5*2 to +7.0*3
–40 to +85
Storage temperature range
Tstg –65 to +125
Notes: 1. Including electrical characteristics and data retention.
2.
V (min):
IN
–3.0 V for pulse width ≤ 50 ns.
3. Should not exceed VCC + 1.0 V.
Unit
V
V
°C
°C
DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
Input voltage
Operating temperature range
VCC
VSS
VIH
VIL
Topr
1.8
0
VCC × 0.7
–0.3*1
–40
Notes: 1. VIN (min): –1.0 V for pulse width ≤ 50 ns.
2.
V (max):
IN
V
CC
+
1.0
V
for
pulse
width
≤
50
ns.
Typ
0
Max
5.5
0
VCC + 0.5*2
VCC × 0.3
+85
Unit
V
V
V
V
°C
Rev.0.0, Nov. 2002, page 5 of 27
7페이지 | |||
구 성 | 총 29 페이지수 | ||
다운로드 | [ HN58X25256I.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HN58X25256I | (HN58X25128I / HN58X25256I) EEPROM | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |