Datasheet.kr   

DPS128X32BV3 데이터시트 PDF




Dense-Pac Microsystems에서 제조한 전자 부품 DPS128X32BV3은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 DPS128X32BV3 자료 제공

부품번호 DPS128X32BV3 기능
기능 128kx32 High Speed CMOS SRAM
제조업체 Dense-Pac Microsystems
로고 Dense-Pac Microsystems 로고


DPS128X32BV3 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 7 페이지수

미리보기를 사용할 수 없습니다

DPS128X32BV3 데이터시트, 핀배열, 회로
4 Megabit High Speed CMOS SRAM
DPS128X32CV3/DPS128X32BV3
DESCRIPTION:
The DPS128X32CV3/DPS128X32BV3 ‘’VERSA-STACK’’ module is
a revolutionary new high speed memory subsystem using Dense-Pac
Microsystems’ ceramic Stackable Leadless Chip Carriers (SLCC)
mounted on a co-fired ceramic substrate. It offers 4 Megabits of
SRAM in a package envelope of 1.090 x 1.090 x 0.252 inches.
The DPS128X32CV3/DPS128X32BV3 contains four individual
128K x 8 SRAMs, packaged in their own hermetically sealed SLCCs
making the module suitable for commercial, industrial and military
applications.
By using SLCCs, the ‘’Versa-Stack’’ family of modules offers a higher
board density of memory than available with conventional
through-hole, surface mount, module, or hybrid techniques.
The DPS128X32BV3 has one active low Chip Enable (CE) and while
the DPS128X32CV3 an active low Chip Enable (CE) and an active
high Select Line (SEL).
By using SLCCs, the ‘’Versa-Stack’’ family of modules offer a
higher board density of memory than available with
conventional through-hole, surface mount or hybrid
techniques.
FEATURES:
Organizations Available:
128K x 32, 256K x 16, or 512K x 8
Access Times:
20*, 25, 30, 35, 45ns
FUNCTIONAL BLOCK DIAGRAM
Fully Static Operation
- No clock or refresh required
Low Power Dissipation:
8.0mW (typ.) Full Standby
0.8W (typ.) Operating (x8)
Single +5V Power Supply,
±10% Tolerance
TTL Compatible
Common Data Inputs and Outputs
Low Data Retention Current:
140µA typ. (2.0V)
w 66-Pin PGA ‘’VERSA-STACK’’
Package
w * Commercial only.
w PIN NAMES
.D A0 - A16
Address Inputs
I/O0 - I/O31 Data Input/Output
aCE0 - CE3
Low Chip Enables
tSEL High Chip Enable
aWE0 - WE1 Write Enables
SOE Output Enable
VDD Power (+5V)
hVSS Ground
eN.C.
No Connect
PIN-OUT DIAGRAM
NOTE: SEL applies to the DPS128X32CV3 only, No Connect for the DPS128X32BV3 version.
et430A044-24
U.comREV. F
This document contains information on a product that is currently released
to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
1




DPS128X32BV3 pdf, 반도체, 판매, 대치품
DPS128X32CV3/DPS128X32BV3
Dense-Pac Microsystems, Inc.
Load
1
2
CL
30pF
5pF
OUTPUT LOAD
Parameters Measured
except tLZ1, tLZ2, tHZ1, tHZ2, tOHZ, tOLZ,
and tWHZ
tLZ1, tLZ2, tHZ1, tHZ2, tOHZ, tOLZ, and
tWHZ
NOTE: tLZ2 and tHZ2 apply to DPS128X32CV3 version only.
AC TEST CONDITIONS
Input Pulse Levels
0V to 3.0V
Input Pulse Rise and Fall Times
5ns
Input and Output
Timing Reference Levels
1.5V
Figure 1. Output Load
* Including Probe and Jig Capacitance.
+5V
DOUT
CL*
480
255
AC OPERATING CONDITIONS AND CHARACTERISTICS - READ CYCLE: Over operating ranges
No. Symbol
Parameter
20ns*
Min. Max.
25ns
Min. Max.
30ns
Min. Max.
35ns
Min. Max.
45ns
Min. Max.
Unit
1 tRC Read Cycle Time
20 25 30 35 45 ns
2 tAA Address Access Time
20 25 30 35 45 ns
3 tCO1 CE to Output Valid
20 25 30 35 45 ns
4 tCO2 SEL to Output Valid
20 25 30 35 45 ns
5 tOE Output Enable to Output Valid
8 10 15 20 25 ns
6 tLZ1 CE to Output in LOW-Z 4, 5
3 3 3 3 3 ns
7 tLZ2 SEL to Output in LOW-Z 4, 5
3 3 3 3 3 ns
8 tOLZ Output Enable to Output in LOW-Z 4, 5 0 0 0 0 0 ns
9 tHZ1 CE to Output in HIGH-Z 4, 5
10 12 15 20 25 ns
10 tHZ2 SEL to Output in HIGH-Z 4, 5
10 12 15 20 25 ns
11 tOHZ Output Enable to Output in HIGH-Z 4, 5 8 10 15 20 25 ns
12 tOH Output Hold from Address Change
3
3
3
3
3 ns
* Available in Commercial Only.
NOTE: tCO2, tLZ2 and tHZ2 apply to DPS128X32CV3 version only.
AC OPERATING CONDITIONS AND CHARACTERISTICS - WRITE CYCLE 6, 7: Over operating ranges
No. Symbol
Parameter
20ns*
25ns
30ns
35ns
45ns Unit
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
13 tWC Write Cycle Time
20 25 30 35 45 ns
14 tAW Address Valid to End of Write
15 20 25 30 40 ns
15 tCW Chip Enable to End of Write
15 20 25 30 40 ns
16 tAS Address Set-Up Time **
0 0 0 0 0 ns
17 tWP Write Pulse Width
15 20 25 30 35 ns
18 tWR Write Recovery Time
0 0 0 0 0 ns
19 tWHZ Write Enable to Output in HIGH-Z 4, 5
8 10 12 15 20 ns
20 tDW Data to Write Time Overlap
12 15 15 20 25 ns
21 tDH Data Hold from Write Time
0 0 0 0 0 ns
22 tOW Output Active from End of Write 3 3 3 3 3 ns
* Available in Commercial Only.
** Valid for both Read and Write Cycles.
4 30A044-24
REV. F

4페이지










DPS128X32BV3 전자부품, 판매, 대치품
Dense-Pac Microsystems, Inc.
DPS128X32CV3/DPS128X32BV3
ORDERING INFORMATION
NOTES:
1. All voltages are with respect to VSS.
2. -2.0V min. for pulse width less than 20ns (VIL min. = -0.5V at DC
level).
3. Stresses greater than those under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
4. This parameter is guaranteed and not 100% tested.
5. Transition is measured at the point of ±500mV from steady state
voltage.
6. When OE and CE are LOW and WE is HIGH, I/O pins are in the
output state,and input signals of opposite phase to the outputs must
not be applied.
7. The outputs are in a high impedance state when WE is LOW.
8. SEL timing is the same as CE timing (Valid for DPS128X32CV3 only).
The Waveform is inverted.
9. CE and WE can initiate and terminate WRITE Cycle.
MECHANICAL DRAWING
30A044-24
REV. F
Dense-Pac Microsystems, Inc.
7321 Lincoln Way u Garden Grove, California 92841-1428
(714) 898-0007 u (800) 642-4477 (Outside CA) u FAX: (714) 897-1772
7

7페이지


구       성 총 7 페이지수
다운로드[ DPS128X32BV3.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
DPS128X32BV3

128kx32 High Speed CMOS SRAM

Dense-Pac Microsystems
Dense-Pac Microsystems

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵