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기능 4M x 72 SDRAM
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WEDPN4M72V 데이터시트, 핀배열, 회로
White Electronic Designs
WEDPN4M72V-XBX
4Mx72 Synchronous DRAM*
FEATURES
High Frequency = 100, 125MHz
Package:
*219 Plastic Ball Grid Array (PBGA), 25 x 21mm
DSingle 3.3V ±0.3V power supply
Fully Synchronous; all signals registered on positive
Eedge of system clock cycle
Internal pipelined operation; column address can be
Dchanged every clock cycle
Internal banks for hiding row access/precharge
NProgrammable Burst length 1,2,4,8 or full page
E4096 refresh cycles
Commercial, Industrial and Military Temperature
Ranges
MOrganized as 4M x 72
Weight: WEDPN4M72V-XBX - 2 grams typical
MBENEFITS
O60% SPACE SAVINGS
CReduced part count
Reduced I/O count
E19% I/O Reduction
w Lower inductance and capacitance for low noise
w Rperformance
Suitable for hi-reliability applications
w TUpgradeable to 8M x 72 density with same footprint
(contact factory for information)
.DO* This product is Not Recommended for New Designs, refer to WEDPN4M72V-XB2X
for new designs.
GENERAL DESCRIPTION
The 32MByte (256Mb) SDRAM is a high-speed CMOS,
dynamic random-access ,memory using 5 chips containing
67,108,864 bits. Each chip is internally configured as a
quad-bank DRAM with a synchronous interface. Each of
the chip’s 16,777,216-bit banks is organized as 4,096 rows
by 256 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for
a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command, which is then followed by a READ or
WRITE command. The address bits registered coincident
with the ACTIVE command are used to select the bank
and row to be accessed (BA0, BA1 select the bank; A0-
11 select the row). The address bits registered coincident
with the READ or WRITE command are used to select the
starting column location for the burst access.
The SDRAM provides for programmable READ or WRITE
burst lengths of 1, 2, 4 or 8 locations, or the full page, with
a burst terminate option. An AUTO PRECHARGE function
may be enabled to provide a self-timed row precharge that
is initiated at the end of the burst sequence.
The 256Mb SDRAM uses an internal pipelined architecture
to achieve high-speed operation. This architecture is
compatible with the 2n rule of prefetch architectures, but
it also allows the column address to be changed on every
clock cycle to achieve a high-speed, fully random access.
Precharging one bank while accessing one of the other
three banks will hide the precharge cycles and provide
seamless, high-speed, random-access operation.
Nata Discrete Approach
S 11.9 11.9 11.9 11.9
11.9
he54
e22.3 TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
t4UArea
5 x 265mm2 = 1328mm 2
.cI/O
oCount
5 x 54 pins = 270 pins
mWhite Electronic Designs Corp. reserves the right to change products or specifications without notice.
ACTUAL SIZE
White Electronic Designs
WEDPN4M72V-XBX
21
25
S
A
V
I
N
G
S
525mm 2
60%
219 Balls 19%
April, 2004
Rev. 15
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com




WEDPN4M72V pdf, 반도체, 판매, 대치품
White Electronic Designs
WEDPN4M72V-XBX
The 256Mb SDRAM is designed to operate in 3.3V, low-
power memory systems. An auto refresh mode is provided,
along with a power-saving, power-down mode.
All inputs and outputs are LVTTL compatible. SDRAMs offer
substantial advances in DRAM operating performance,
including the ability to synchronously burst data at a high
data rate with automatic column-address generation,
the ability to interleave between internal banks in order
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during a
burst access.
FUNCTIONAL DESCRIPTION
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for
a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command which is then followed by a READ or
WRITE command. The address bits registered coincident
with the ACTIVE command are used to select the bank
and row to be accessed (BA0 and BA1 select the bank,
A0-11 select the row). The address bits (A0-7) registered
coincident with the READ or WRITE command are used to
select the starting column location for the burst access.
Prior to normal operation, the SDRAM must be initialized.
The following sections provide detailed information
covering device initialization, register definition, command
descriptions and device operation.
must be performed. After the AUTO REFRESH cycles
are complete, the SDRAM is ready for Mode Register
programming. Because the Mode Register will power up
in an unknown state, it should be loaded prior to applying
any operational command.
REGISTER DEFINITION
MODE REGISTER
The Mode Register is used to define the specific mode
of operation of the SDRAM. This definition includes the
selection of a burst length, a burst type, a CAS latency,
an operating mode and a write burst mode, as shown in
Figure 2. The Mode Register is programmed via the LOAD
MODE REGISTER command and will retain the stored
information until it is programmed again or the device
loses power.
Mode register bits M0-M2 specify the burst length, M3
specifies the type of burst (sequential or interleaved),
M4-M6 specify the CAS latency, M7 and M8 specify the
operating mode, M9 specifies the WRITE burst mode, and
M10 and M11 are reserved for future use.
The Mode Register must be loaded when all banks are
idle, and the controller must wait the specified time before
initiating the subsequent operation. Violating either of these
requirements will result in unspecified operation.
BURST LENGTH
INITIALIZATION
SDRAMs must be powered up and initialized in a predefined
manner. Operational procedures other than those specified
may result in undefined operation. Once power is applied
to VCC and VCCQ (simultaneously) and the clock is stable
(stable clock is defined as a signal cycling within timing
constraints specified for the clock pin), the SDRAM
requires a 100µs delay prior to issuing any command
other than a COMMAND INHIBIT or a NOP. Starting at
some point during this 100µs period and continuing at
least through the end of this period, COMMAND INHIBIT
or NOP commands should be applied.
Once the 100µs delay has been satisfied with at least
one COMMAND INHIBIT or NOP command having been
applied, a PRECHARGE command should be applied. All
banks must be precharged, thereby placing the device in
the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles
Read and write accesses to the SDRAM are burst oriented,
with the burst length being programmable, as shown
in Figure 2. The burst length determines the maximum
number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 1, 2, 4
or 8 locations are available for both the sequential and the
interleaved burst types, and a full-page burst is available
for the sequential type. The full-page burst is used in
conjunction with the BURST TERMINATE command to
generate arbitrary burst lengths.
Reserved states should not be used, as unknown operation
or incompatibility with future versions may result.
When a READ or WRITE command is issued, a block of
columns equal to the burst length is effectively selected.
All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a
boundary is reached. The block is uniquely selected by
A1-7 when the burst length is set to two; by A2-7 when
the burst length is set to four; and by A3-7 when the burst
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April, 2004
Rev. 15
4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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WEDPN4M72V 전자부품, 판매, 대치품
White Electronic Designs
WEDPN4M72V-XBX
TRUTH TABLE – COMMANDS AND DQM OPERATION (NOTE 1)
Name (Function)
COMMAND INHIBIT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row) (3)
READ (Select bank and column, and start READ burst) (4)
WRITE (Select bank and column, and start WRITE burst) (4)
BURST TERMINATE
PRECHARGE (Deactivate row in bank or banks) (5)
AUTO REFRESH or SELF REFRESH (Enter self refresh mode) (6, 7)
LOAD MODE REGISTER (2)
Write Enable/Output Enable (8)
Write Inhibit/Output High-Z (8)
NOTES:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-11 define the op-code written to the Mode Register and A12 should be driven
low.
3. A0-11 provide row address, and BA0, BA1 determine which bank is made active.
4. A0-8 provide column address; A10 HIGH enables the auto precharge feature
(nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1
determine which bank is being read from or written to.
CS# RAS# CAS# WE# DQM ADDR
I/Os
HX XX X
X
X
LH HHX
X
X
L
L
HH
X Bank/Row
X
L H L H L/H 8 Bank/Col X
L H L L L/H 8 Bank/Col Valid
LH HL X
X Active
LL HLX
Code
X
LL LHX
X
X
L L L L X Op-Code X
–– –– L
– Active
–– ––H
– High-Z
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks
precharged and BA0, BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is
LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t
Care” except for CKE.
8. Activates or deactivates the I/Os during WRITEs (zero-clock delay) and READs
(two-clock delay).
COMMANDS
The Truth Table provides a quick reference of available
commands. This is followed by a written description of each
command. Three additional Truth Tables appear following
the Operation section; these tables provide current state/
next state information.
COMMAND INHIBIT
The COMMAND INHIBIT function prevents new commands
from being executed by the SDRAM, regardless of whether
the CK signal is enabled. The SDRAM is effectively
deselected. Operations already in progress are not
affected.
when all banks are idle, and a subsequent executable
command cannot be issued until tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate) a
row in a particular bank for a subsequent access. The
value on the BA0, BA1 inputs selects the bank, and the
address provided on inputs A0-11 selects the row. This row
remains active (or open) for accesses until a PRECHARGE
command is issued to that bank. A PRECHARGE
command must be issued before opening a different row
in the same bank.
READ
NO OPERATION (NOP)
The READ command is used to initiate a burst read
access to an active row. The value on the BA0, BA1 inputs
The NO OPERATION (NOP) command is used to perform selects the bank, and the address provided on inputs A0-7
a NOP to an SDRAM which is selected (CS# is LOW). selects the starting column location. The value on input
This prevents unwanted commands from being registered A10 determines whether or not AUTO PRECHARGE is
during idle or wait states. Operations already in progress used. If AUTO PRECHARGE is selected, the row being
are not affected.
accessed will be precharged at the end of the READ
LOAD MODE REGISTER
The Mode Register is loaded via inputs A0-11. See Mode
Register heading in the Register Definition section. The
LOAD MODE REGISTER command can only be issued
burst; if AUTO PRECHARGE is not selected, the row will
remain open for subsequent accesses. Read data appears
on the I/Os subject to the logic level on the DQM inputs
two clocks earlier. If a given DQM signal was registered
HIGH, the corresponding I/Os will be High-Z two clocks
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April, 2004
Rev. 15
7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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4M x 72 SDRAM

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