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PDF K9K8G08U0M Data sheet ( Hoja de datos )
| Número de pieza | K9K8G08U0M | |
| Descripción | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory | |
| Fabricantes | Samsung | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K9K8G08U0M (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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K9WAG08U1M
K9K8G08U0M
Preliminary
FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1
1 page  
K9WAG08U1M
K9K8G08U0M
Preliminary
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
K9WAG08U1M-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
N.C
R/B2
R/B1
RE
CE1
CE2
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
48 N.C
47 N.C
46 N.C
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 N.C
38 N.C
37 Vcc
36 Vss
35 N.C
34 N.C
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 N.C
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1 #48
#24
0~8°
0.45~0.75
0.018~0.030
18.40±0.10
0.724±0.004
#25
1.00±0.05
0.039±0.002
01..02407MAX
0.05
0.002
MIN
(
0.50
0.020
)
5
5 Page 
K9WAG08U1M
K9K8G08U0M
Preliminary
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9XXG08UXM-XCB0
K9XXG08UXM-XIB0
K9XXG08UXM-XCB0
K9XXG08UXM-XIB0
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
IOS
Rating
-0.6 to +4.6
-0.6 to +4.6
-0.6 to Vcc+0.3 (<4.6V)
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXG08UXM-XCB0 :TA=0 to 70°C, K9XXG08UXM-XIB0:TA=-40 to 85°C)
Parameter
Symbol
Min
Typ.
Max
Supply Voltage
VCC 2.7 3.3 3.6
Supply Voltage
VSS 0 0 0
Unit
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Page Read with
Operating Serial Access
Current Program
Erase
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Symbol
ICC1
ICC2
ICC3
ISB1
ISB2
ILI
ILO
VIH(1)
VIL(1)
VOH
VOL
IOL(R/B)
Test Conditions
tRC=25ns
CE=VIL, IOUT=0mA
-
-
CE=VIH, WP=0V/VCC
CE=VCC-0.2, WP=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
-
-
IOH=-400µA
IOL=2.1mA
VOL=0.4V
Min Typ Max Unit
- 15 30
mA
- -1
- 20 100
- - ±20 µA
- - ±20
0.8xVcc - Vcc+0.3
-0.3 - 0.2xVcc
V
2.4 -
-
- - 0.4
8 10 - mA
NOTE : 1. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
3. The typical value of the K9WAG08U1M’s ISB2 is 40µA and the maximum value is 200µA.
4. The maximum value of K9WAG08U1M-Y,P’s ILI and ILO is ±40µA, the maximum value of K9WAG08U1M-I’s ILI and ILO is ±20µA.
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet K9K8G08U0M.PDF ] | |
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