2SD2493Darlington
Equivalent circuit
B
C
(70Ω)
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)
Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
2SD2493
Unit
Symbol
Conditions
2SD2493
Unit
VCBO 110 V ICBO
VCB=110V
100max
µA
VCEO 110 V IEBO
VEB=5V
100max
µA
VEBO
5
V V(BR)CEO
IC=30mA
110min
V
IC
6
A hFE
VCE=4V, IC=5A
5000min∗
IB
1
A VCE(sat) IC=5A, IB=5mA
2.5max
V
PC
60(Tc=25°C)
W
VBE(sat)
IC=5A, IB=5mA
3.0max
V
Tj
150 °C fT
VCE=12V, IE=–2A
60typ
MHz
Tstg
–55 to +150
°C
COB
VCB=10V, f=1MHz
55typ
pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(V)
(Ω) (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Type No.
b. Lot No.
www.DataSheet4U.com
I C– V CE Characteristics (Typical)
6
0.5mA
0.4mA
0.3mA
4
0.2mA
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
24
IC=5A
21
IB=0.1mA
IC=3A
2
0
02 4 6
Collector-Emitter Voltage VCE(V)
0
0.1
0.5 1
5 10
Base Current IB(mA)
50 100
0
0 1 2 2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40000
(VCE=4V)
Typ
10000
5000
h FE– I C Temperature Characteristics (Typical)
40000
(VCE=4V)
10000 125˚C
5000
25˚C
θ j-a– t Characteristics
5
1000
500
200
0.02
0.1 0.5 1
Collector Current IC(A)
1000
500
100
5 6 0.02
–30˚C
0.1 0.5 1
Collector Current IC(A)
1
0.5
56 1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
80
Typ
60
Safe Operating Area (Single Pulse)
20
10
5
DC
40
20
0
–0.02
–0.1
–1
Emitter Current IE(A)
1
0.5
Without Heatsink
Natural Cooling
0.1
0.05
–6
35
10
50 100 200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
60
40
20
Without Heatsink
3.5
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
153
