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Datasheet IN24LC16 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IN24LC16 | 16K 2.5V CMOS Serial EEPROMs TECHNICAL DATA
16K Serial EEPROM with I2C bus
DESCRIPTION
IN24LC16
The IZ24LC16 is a 16K bit Electrically Erasable PROM. The chip is organized as eight blocks of 256 x 8 bit memory with a 2-wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active curre |  IK Semiconductor | cmos |
| 2 | IN24LC16B | 16K 2.5V CMOS Serial EEPROMs 16K Serial EEPROM with I2C bus ee
DESCRIPTION
U 4 t
m o .c
TECHNICAL DATA
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w
a t a is a 16K bit Electrically Erasable PROM. The chip is organized as eight blocks of 256 x 8 bit The IN24LC16B D memory with a 2-wire serial interface. Low voltage design permits operation down to 2.5 volts with s | IK Semiconductor | cmos |
IN2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IN202 | DC-to-DC Converter Control Circuits NNO
DC-TO DC Converter Control Circuits t a DESCRIPTION D . IN202B Series is a High Integrated control circuit containing the primary functions The w required w for DC-to-DC converters with 2% Voltage reference, and two operational amplifiers. This w was specifically designed to be incorporated in  INNO converter | | |
| 2 | IN24AA02 | 2K 1.8V CMOS Serial EEPROMs TECHNICAL DATA
2K 1.8V CMOS Serial EEPROMs
IN24AA02
DESCRIPTION IN24AA02 is a 2K-bit Electrically Erasable PROM. The device is organized as a single block of 256x8 bit memory with a two-wire serial interface. Low voltage design permits operation down to 1.8V with standby and active currents of on  Integral cmos | | |
| 3 | IN24LC02B | 2K 2.5V CMOS Serial EEPROMs w The IN24LC02B is available in the standard 8-pin DIP.
FEATURES
• Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 10 µA standby current typical at 5.5V - 5 µA standby current typical at 3.0V • Organized as a single block of 256 bytes (25 IK Semiconductor cmos | | |
| 4 | IN24LC04 | (IN24LC04/08) 8K 2.5V CMOS Serial EEPROMs TECHNICAL DATA
4K/8K 2.5V CMOS Serial EEPROMs
DESCRIPTION
IN24LC04/08
IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby IK Semiconductor cmos | | |
| 5 | IN24LC04B | (IN24LC04B / IN24LC08B) 4K/8K 2.5V CMOS Serial EEPROMs w
U 4 tCMOS Serial EEPROMs IN24LC04B/08B 4K/8K 2.5V e e h S DESCRIPTION a t a IN24LC04B/08B 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x .D withisaatwo 8 bit memory serial interface. Low voltage design permits operation down to 2.5 volts with stand IK Semiconductor cmos | | |
| 6 | IN24LC08 | (IN24LC04/08) 8K 2.5V CMOS Serial EEPROMs TECHNICAL DATA
4K/8K 2.5V CMOS Serial EEPROMs
DESCRIPTION
IN24LC04/08
IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby IK Semiconductor cmos | | |
| 7 | IN24LC08B | (IN24LC04B / IN24LC08B) 4K/8K 2.5V CMOS Serial EEPROMs w
U 4 tCMOS Serial EEPROMs IN24LC04B/08B 4K/8K 2.5V e e h S DESCRIPTION a t a IN24LC04B/08B 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x .D withisaatwo 8 bit memory serial interface. Low voltage design permits operation down to 2.5 volts with stand IK Semiconductor cmos | |
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