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PDF SUV85N03-04P Data sheet ( Hoja de datos )
| Número de pieza | SUV85N03-04P | |
| Descripción | N-Channel 30-V (D-S) 175C MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
SUV85N03-04P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.0043 @ VGS = 10 V
0.007 @ VGS = 4.5 V
TO-262
ID (A)a
85a
85a
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Secondary Side DC/DC
D
1 23
G
G DS
Top View
SUV85N03-04P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
TA = 25_Cd
ID
IDM
IAR
EAR
PD
TJ, Tstg
85a
85a
240
75
280
166c
3.75
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mountd
Free Air
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72088
S-22245—Rev. A, 25-Nov-02
Symbol
RthJA
RthJC
Limit
40
62.5
0.9
Unit
_C/W
www.vishay.com
1
1 page  
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THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Ambient Temperature (_C)
1000
100
10
1
0.1
0.1
SUV85N03-04P
Vishay Siliconix
Safe Operating Area
Limited
by rDS(on)
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
1 10
VDS - Drain-to-Source Voltage (V)
100
2
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10- 5
Single Pulse
10- 4
Normalized Thermal Transient Impedance, Junction-to-Case
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 72088
S-22245—Rev. A, 25-Nov-02
www.vishay.com
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SUV85N03-04P.PDF ] | |
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