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PDF KMZ11B1 Data sheet ( Hoja de datos )
| Número de pieza | KMZ11B1 | |
| Descripción | Magnetic field sensor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
KMZ11B1
Magnetic field sensor
Preliminary specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17
1996 Dec 11
1 page  
Philips Semiconductors
Magnetic field sensor
Preliminary specification
KMZ11B1
20
,,,,,,Hd
,,,,,,(kA/m)
,,,,,,,,,,,,10
Hx Hy
Hd
MSA925
,,,,,,,,,,,,,,,,,,Hy>1kA/m
,,,,,,(2)
Hy > 1 kA/m
safe operating
area
(1)
0
01 234 5
Hx (kA/m)
In applications with Hx < 3 kA/m, the sensor has to be reset,
after leaving the SOAR, by an auxiliary field of Hx = 3 kA/m.
(1) Region of permissible operation.
(2) Permissible extension if Hy < 1 kA/m.
Fig.4 Safe Operating Area (permissible disturbing
field Hd as a component of auxiliary field Hx).
2
S (Hx)
S (3 kA/m)
1
MSA924
0
01 234 5
Hx (kA/m)
In applications with Hx ≤ 3 kA/m, the sensor has to be
reset by an auxiliary field of Hx = 3 kA/m before use.
Fig.5 Relative sensitivity (ratio of sensitivity at
certain Hx and sensitivity at Hx = 3 kA/m).
8
Vo
(mV/V)
4
0
max
typ
min
MSA926
APPLICATION INFORMATION
The leadframe material is a copper alloy containing 2%
iron. In applications with magnetic fields outside the
specified operating range an increasing hysteresis effect
will arise due to magnetization effects in the leadframe.
However, in angular measurement applications of the
KMZ11B1 in combination with strong magnetic fields
H > 50 kA/m there is no additional hysteresis present.
4
8
2 10 1 2
H y (kA/m)
Hx = 3 kA/m; Tamb = 25 °C; Voffset = 0.
Fig.6 Sensor output characteristics.
1996 Dec 11
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet KMZ11B1.PDF ] | |
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