(PDF) BUZ901DP Datasheet - (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET

Número de pieza	BUZ901DP
Descripción	(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET
Fabricantes	ETC
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No Preview Available ! MAGNA TEC MECHANICAL DATA Dimensions in mm 3.3 Dia. 20.0 BUZ900DP BUZ901DP N–CHANNEL POWER MOSFET 5.0 POWER MOSFETS FOR AUDIO APPLICATIONS 123 2.0 3.4 1.0 2.0 1.2 5.45 5.45 TO–3PBL Pin 1 – Gate Pin 2 – Source Case is Source 0.6 2.8 Pin 3 – Drain FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS Gate – Source Voltage ID Continuous Drain Current ID(PK) Body Drain Diode PD Total Power Dissipation @ Tcase = 25°C Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature RθJC Thermal Resistance Junction – Case BUZ900DP 160V BUZ901DP 200V ±14V 16A 16A 250W –55 to 150°C 150°C 0.5°C/W Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95 1 page

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PDF BUZ901DP Data sheet ( Hoja de datos )