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부품번호 | IRL3715Z 기능 |
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기능 | HEXFET Power MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 12 페이지수
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 94793
IRL3715Z
IRL3715ZS
IRL3715ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 11m: 7.0nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3715Z
D2Pak
IRL3715ZS
TO-262
IRL3715ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
fCase-to-Sink, Flat Greased Surface
fÃJunction-to-Ambient
gJunction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
20
± 20
50 h
36 h
200
45
23
0.30
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
3.33
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
10/7/03
IRL3715Z/S/L
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
100
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
12
ID= 12A
10
VDS= 20V
VDS= 10V
8
6
4
2
0
0 4 8 12
QG Total Gate Charge (nC)
16
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
100.0
10.0
TJ = 175°C
1.0 TJ = 25°C
0.1
0.0
VGS = 0V
0.5 1.0 1.5
VSD, Source-toDrain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
1msec
10msec
10 100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRL3715Z/S/L
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
Id
Vds
Vgs
Vgs(th)
www.irf.com
Qgs1 Qgs2 Qgd
Qgodr
Fig 16. Gate Charge Waveform
7
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ IRL3715Z.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRL3715 | SMPS MOSFET | International Rectifier |
IRL3715L | SMPS MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |