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IRL3402 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRL3402은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRL3402 자료 제공

부품번호 IRL3402 기능
기능 HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


IRL3402 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRL3402 데이터시트, 핀배열, 회로
PRELIMINARY
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1697
IRL3402
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.01
ID = 85A…
S
TO-220AB
Max.
85…
54
340
110
0.91
± 10
14
290
51
11
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
10/31/97




IRL3402 pdf, 반도체, 판매, 대치품
IRL3402
6000 VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
5000
Crss = Cgd
Coss = Cds + Cgd
4000
3000
Ciss
2000 Coss
1000
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 ID = 85 A
VDS = 16V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
TJ = 150° C
TJ = 25°C
1
0.1
0.2
VGS = 0 V
0.6 1.0 1.4 1.8
VSD,Source-to-Drain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100 100us
1ms
10 10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area

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IRL3402 전자부품, 판매, 대치품
IRL3402
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
4
3.78 (.14 9)
3.54 (.13 9)
-A-
6.4 7 (.25 5)
6.1 0 (.24 0)
1 23
1 . 1 5 ( .0 4 5 )
M IN
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
4.0 6 (.16 0)
3.5 5 (.14 0)
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-B-
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
L E A D A S S IG N M E N T S
1 - GATE
2 - DR AIN
3 - SOURCE
4 - DR AIN
3X
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
2 . 5 4 ( .1 0 0 )
3X
0 . 9 3 ( .0 3 7 )
0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 ) M B A M
3X
0.5 5 (.02 2)
0.4 6 (.01 8)
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E X AEMXPALMEPL: ET:HITSHIS AI SN AINRFI1R0F110010
W ITWHITAHS SAESMSBELMYB LY
LO TL OCTO DCEO D9EB 19MB1M
IN TIENRTNEARTNIOA TNIAOLN AL
R ECRTEICF ITEIRF IE R
LO GLO G O
IR FI1R0F1100 10
9 2 4962 4 6
9B 9B1M 1 M
A S SAESMSBELMYB LY
LO TLOTCO DCEOD E
AA
P A RPTARNTU MNUBEMRBE R
D A TDEA TCEODCEOD E
(Y Y(WY YWW) W )
Y Y Y=Y Y=E AYRE A R
W WW =W W=EWEKEE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
10/97

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