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IRL3303 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRL3303은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRL3303 자료 제공

부품번호 IRL3303 기능
기능 HEXFET POWER MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


IRL3303 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRL3303 데이터시트, 핀배열, 회로
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1322B
IRL3303
HEXFET® Power MOSFET
D
VDSS = 30V
G RDS(on) = 0.026
S ID = 38A
TO-220AB
Max.
38
27
140
68
0.45
±16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97




IRL3303 pdf, 반도체, 판매, 대치품
IRL3303
1600
1400
1200
C is s
V GS = 0V,
f = 1MHz
C is s = C gs + C gd , Cds SH OR TE D
C rss = C gd
C oss = Cd s + C gd
1000
800
C oss
600
C rss
400
200
0A
1 10 100
V D S , D rain-to-S ource Voltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 1 75 °C
TJ = 25°C
10
1 VGS = 0 V A
0.0 0.5 1.0 1.5 2.0 2.5
V SD , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
15
I D = 20A
12
V DS = 24V
V DS = 15V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
100 10µs
100 µs
10
1m s
TC = 25°C
TJ = 175°C
S ing le Pulse
1
10m s
1 10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area

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IRL3303 전자부품, 판매, 대치품
IRL3303
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS

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