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부품번호 | IRL3303 기능 |
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기능 | HEXFET POWER MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 8 페이지수
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1322B
IRL3303
HEXFET® Power MOSFET
D
VDSS = 30V
G RDS(on) = 0.026Ω
S ID = 38A
TO-220AB
Max.
38
27
140
68
0.45
±16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
IRL3303
1600
1400
1200
C is s
V GS = 0V,
f = 1MHz
C is s = C gs + C gd , Cds SH OR TE D
C rss = C gd
C oss = Cd s + C gd
1000
800
C oss
600
C rss
400
200
0A
1 10 100
V D S , D rain-to-S ource Voltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 1 75 °C
TJ = 25°C
10
1 VGS = 0 V A
0.0 0.5 1.0 1.5 2.0 2.5
V SD , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
15
I D = 20A
12
V DS = 24V
V DS = 15V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
100 10µs
100 µs
10
1m s
TC = 25°C
TJ = 175°C
S ing le Pulse
1
10m s
1 10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
4페이지 IRL3303
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ IRL3303.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRL3302 | HEXFET Power MOSFET | International Rectifier |
IRL3302PBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |