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IRL3202 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRL3202은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRL3202 자료 제공

부품번호 IRL3202 기능
기능 HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


IRL3202 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRL3202 데이터시트, 핀배열, 회로
PRELIMINARY
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
G
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RqJC
RqCS
RqJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD 9.1695A
IRL3202
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.016W
ID = 48A
S
TO-220AB
Max.
48
30
190
69
0.56
± 10
14
270
29
6.9
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/97




IRL3202 pdf, 반도체, 판매, 대치품
IRL3202
3500
3000
2500
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1500
1000
Coss
500
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15
ID = 29A
12
VDS = 16V
9
6
3
0
0 10 20 30 40 50 60 70
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
TJ = 25 ° C
10
VGS = 0 V
1
0.2 0.8 1.4 2.0 2.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
1ms
10
10ms
TC = 25 ° C
TJ = 150° C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area

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IRL3202 전자부품, 판매, 대치품
IRL3202
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
15.24 (.60 0)
14.84 (.58 4)
10.54 (.415)
10.29 (.405)
4
3.78 (.149)
3.54 (.139)
-A -
6.47 (.255)
6.10 (.240)
1 23
1.15 (.045)
M IN
14.09 (.55 5)
13.47 (.53 0)
4.06 (.160)
3.55 (.140)
4.69 (.185 )
4.20 (.165 )
-B-
1.32 (.052)
1.22 (.048)
LE A D A S S IG N M E N T S
1 - GATE
2 - DR A IN
3 - SOURCE
4 - DR A IN
3X
1 .40 (.0 55)
1 .15 (.0 45)
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
NOTES:
2X
1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982.
2 C O N TR O LLING D IM E N S IO N : INC H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S .
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
LOT CODE 9B1M
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
ASSEMBLY
LOT CODE
IR F 1 0 1 0
9246
9B 1M
A
PART NUMBER
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
11/97

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