|
|
|
부품번호 | SSW4N60B 기능 |
|
|
기능 | 600V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
November 2001
SSW4N60B / SSI4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
SSW Series
GDS
I2-PAK
SSI Series
G!
D
!
!
#"
!
!
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8! from case for 5 seconds
SSW4N60B / SSI4N60B
600
4.0
2.5
16
± 30
240
4.0
10
5.5
3.13
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 1.25 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 %Notes :
1.
2.
IVDG=S =2500V&
A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by RDS(on)
101 100 µs
1 ms
10 ms
100 DC
10-1
10-2
100
% Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
% Notes :
1. VGS = 10 V
2. ID = 2.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
4
3
2
1
0
25 50 75 100 125 150
T , Case Temperature [$]
C
Figure 10. Maximum Drain Current
vs Case Temperature
100
D = 0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
sin gle pu lse
% N otes :
1. Z(
(t)
JC
=
1.25
$ /W
M ax.
2. D uty Factor, D =t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Z(
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S qu a re W ave P u lse D u ra tion [se c]
1
Figure 11. Transient Thermal Response Curve
101
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
4페이지 Package Dimensions
9.90 ±0.20
D2-PAK
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54 TYP
0.80 ±0.10
2.54 TYP
10.00 ±0.20
0.10 ±0.15
2.40 ±0.20
0°~3°
0.50
+0.10
–0.05
10.00 ±0.20
(8.00)
(4.40)
(2XR0.45)
©2001 Fairchild Semiconductor Corporation
0.80 ±0.10
Dimensions in Millimeters
Rev. B, November 2001
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ SSW4N60B.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SSW4N60B | 600V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |