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PDF 2SK0065 Data sheet ( Hoja de datos )

Número de pieza 2SK0065
Descripción Silicon N-Channel Junction FET
Fabricantes Panasonic Semiconductor　
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SK0065 Hoja de datos, Descripción, Manual

Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I Features
G Diode is connected between gate and source
G Low noise voltage
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VGDO
IDSO
IDGO
IGSO
PD
Topr
Tstg
12
−12
2
2
2
20
−10 to +70
−20 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200
0.7±0.1
1: Drain
2: Gate
3: Source
NS-B1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = 4.5V, VGS = 0, RS = 2.2kΩ ± 1% 0.04
0.8 mA
Mutual conductance
Noise figure
Voltage gain
gm
NV
GV1*
GV2*
GV3*
VDS = 4.5V, VGS = 0
RS = 2.2kΩ ± 1%, f = 1kHz
VDS = 4.5V, RS = 2.2kΩ ± 1%
CG = 10pF, A-curve
VDS = 4.5V, RS = 2.2kΩ ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 12V, RS = 2.2kΩ ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 1V, RS = 2.2kΩ ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
300
500
−10
−9.5
−11
4
µS
µV
dB
dB
dB
* IDSS rank classification and GV value
Runk
IDSS (mA)
GV1 (dB)
GV2 (dB)
∆| GV1 − GV2 | (dB)
P
0.04 to 0.2
> −13
> −12
<3
Q
0.15 to 0.8
> −12
> −11
<3
Note) The part number in the parenthesis shows conventional part number.
241

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