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PDF 2SK0198 Data sheet ( Hoja de datos )
| Número de pieza | 2SK0198 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
s Features
q High mutual conductance gm
q Low noise type
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VDSX
VGDO
ID
IG
PD
Tch
Tstg
30
−30
20
10
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.40+–00..0150
3
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Unit: mm
0.16+–00..0160
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol (Example): 1O
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = 10 V, VGS = 0
0.5 12 mA
Gate to Source leakage current IGSS
VGS = −30 V, VDS = 0
−100
nA
Gate to Source cut-off voltage VGSC
VDS = 10 V, ID = 10 µA
− 0.1
−1.5 V
Mutual conductance
gm
VDS = 10 V, ID = 0.5 mA, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 kHz
4
13
mS
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
Noise figure
NV
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 30 V, ID = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
14
3.5
60
pF
pF
mV
* IDSS rank classification
Runk
P
IDSS (mA)
Marking Symbol
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJF00006BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK0198.PDF ] | |
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