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PDF CGB240 Data sheet ( Hoja de datos )
| Número de pieza | CGB240 | |
| Descripción | 2-Stage Bluetooth InGaP HBT Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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CGB 240
Datasheet
2-Stage Bluetooth InGaP HBT Power Amplifier
Description:
Applications:
The CGB240 GaAs Power Amplifier MMIC has been
especially developed for wireless applications in the
2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its
high power added efficiency and single positive sup-
ply operation makes the device ideally suited to
handheld applications. The device delivers 23 dBm
output power at a supply voltage of 3.2 V, with an
overall PAE of 50%. The output power can be ad-
justed using an analog control voltage (VCTR). Simple
external input-, interstage-, and output matching cir-
cuits are used to adapt to the different requirements
of linearity and harmonic suppression in various ap-
plications.
For WLAN applications (IEEE802.11b) or appli-
cations serving both WLAN and Bluetooth, we
recommend to use the CGB240B device.
• Bluetooth Class 1
• Cordless Phones
• Home RF
Features:
• Single voltage supply.
• Wide operating voltage range 2.0 - 5.5 V.
• POUT = 23 dBm at VC = 3.2 V.
• Overall power added efficiency (PAE) typi-
cally 50%.
• High PAE at low–power mode.
• Analog power control with four power
steps.
• Straight-Forward Matching; Few external
components.
Package Outline:
1
5
TSMSOSPO-P1-01-02
Pin Configuration:
1 & 2:
3:
4, 5, & 10:
6:
7:
8 & 9:
11 (Paddle):
Vc1
RF In
NC
Vcntrl1
Vcntrl2
Vc2
GND
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 2/13
1 page  
CGB 240 Datasheet
Typical Device Performance for Reference Design (see Application Note 1)
Valid for all plots: TA = 25 °C; VCC = 3.2 V; VCTR = 2.5 V; f = 2.4 ... 2.5 GHz;
ZIN = ZOUT = 50 Ohms. Changes from these values noted.
Efficiency PAE = f ( VCC )
PIN = +3dBm
60,0
%
55,0
Output Power POUT = f ( VCC )
PIN = +3dBm
25,0
dBm
23,0
50,0
21,0
45,0
19,0
40,0
17,0
35,0
30,0
2,0
3,0 4,0
Supply Voltage Vcc
Supply Current ICC = f ( VCTR )
PIN = +3dBm
140,0
mA
120,0
100,0
Vcc=3.2V
V 5,0
80,0
Vcc=2.8V
60,0
40,0
20,0
0,0
1,0
1,5 2,0
Vctr
2,5 V 3,0
15,0
2,0
3,0 4,0
Supply Voltage Vcc
V 5,0
Output Power POUT = f ( VCTR )
PIN = +3dBm
25,0
dBm
20,0
Vcc=3.2V
15,0 Vcc=2.8V
10,0
5,0
0,0
-5,0
-10,0
1,0
1,5 2,0
Vctr
2,5 V 3,0
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 6/13
5 Page 
CGB 240 Datasheet
TriQuint Semiconductor, Inc.
C6
C8
C5 C
C1
L2
C
CGB240
L3 3
4
RF In
(SMA)
„White Dots“ =
Ground Vias
C7
C2
RF Out
(SMA)
Figure 6
Layout of CGB240 Bluetooth evaluation board used in
application note 2.
For a discrete matching concept, the same evaluation board (V1.2) as shown in fig-
ure 5 might be used. However, to insert the series elements (L2, L3, L4), the pcb
lines have to be cut mechanically.
The use of a discrete matching concept saves pcb space but will lead to a lower out-
put power (typ. 0.3dB lower) and higher BOM cost.
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 12/13
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet CGB240.PDF ] | |
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