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PDF FLM5964-25F Data sheet ( Hoja de datos )
| Número de pieza | FLM5964-25F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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FLM5964-25F
omFEATURES
C-Band Internally Matched FET
.c• High Output Power: P1dB = 44.5dBm (Typ.)
t4U• High Gain: G1dB = 10.0dB (Typ.)
e• High PAE: ηadd = 37% (Typ.)
e• Low IM3 = -46dBc@Po = 33.5dBm
h• Broad Band: 5.9 ~ 6.4GHz
S• Impedance Matched Zin/Zout = 50Ω
ta• Hermetically Sealed Package
.DaDESCRIPTION
The FLM5964-25F is a power GaAs FET that is internally matched for
wstandard communication bands to provide optimum power and gain in a
w50 ohm system.
wEudyna’s stringent Quality Assurance Program assures the highest
mreliability and consistent performance.
oABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
.cItem
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
UGate-Source Voltage
VGS
-5 V
t4Total Power Dissipation
PT Tc = 25°C
93.7 W
eStorage Temperature
Tstg
-65 to +175
°C
eChannel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
h1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with
gate resistance of 25Ω.
SELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
taItem
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
aSaturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 10 15
A
Transconductance
gm VDS = 5V, IDS = 6.5A
- 10 -
S
.DPinch-off Voltage
Vp VDS = 5V, IDS = 500mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -500µA
wOutput Power at 1dB G.C.P.
P1dB
-5.0 -
43.5 44.5
-
-
V
dBm
wPower Gain at 1dB G.C.P.
mDrain Current
w .coPower-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 6.4 GHz,
ZS=ZL= 50 ohm
9.0 10.0 -
- 6500 7600
- 37 -
dB
mA
%
UGain Flatness
∆G
- - ±0.6
dB
et43rd Order Intermodulation
heDistortion
f = 6.4 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 33.5dBm S.C.L.
-44 -46
-
dBc
SThermal Resistance
Rth Channel to Case
- 1.4 1.6
°C/W
ataChannel Temperature Rise
∆Tch 10V x Idsr x Rth
- - 100
°C
www.DCASE STYLE: IK
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM5964-25F.PDF ] | |
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