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PDF IHW20T120 Data sheet ( Hoja de datos )
| Número de pieza | IHW20T120 | |
| Descripción | IGBT in Trench and Fieldstop Tech | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IHW20T120 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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.com IHW20T120Soft Switching Series
eet4ULow Loss DuoPack : IGBT in Trench and Fieldstop technology
h with soft, fast recovery anti-parallel EmCon HE diode
taS• Short circuit withstand time – 10µs
a• Designed for :
- Soft Switching Applications
.D - Induction Heating
w• Trench and Fieldstop technology for 1200 V applications offers :
w - very tight parameter distribution
w - high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
mtemperature coefficient in VCE(sat)
• Very soft, fast recovery anti-parallel EmCon™ HE diode
o• Low EMI
.c• Application specific optimisation of inverse diode
C
G
E
Type
UIHW20T120
VCE
1200V
IC
20A
VCE(sat),Tj=25°C
1.7V
Tj,max
150°C
Marking
H20T120
t4Maximum Ratings
Parameter
eCollector-emitter voltage
eDC collector current
hTC = 25°C
TC = 100°C
SPulsed collector current, tp limited by Tjmax
taTurn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
aDiode forward current
TC = 25°C
.DTC = 100°C
Diode pulsed current, tp limited by Tjmax
wDiode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
wTC = 25°C, tp ≤ 2.5µs, sine halfwave
w mTC = 100°C, tp ≤ 2.5µs, sine halfwave
.coGate-emitter voltage
UShort circuit withstand time1)
t4VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
ePower dissipation, TC = 25°C
heOperating junction temperature
SStorage temperature
taSoldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247AC Q67040-S4652
Value
1200
40
20
60
60
Unit
V
A
23
13
36
50
130
120
±20
10
178
-40...+150
-55...+150
260
A
V
µs
W
°C
°C
www.Da1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2
Apr-04
1 page  
Soft Switching Series
IHW20T120
70A
60A
50A
40A
30A
20A
10A
TC=80°C
TC=110°C
Ic
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 28Ω)
10A
tp=2µs
10µs
50µs
1A 200µs
500µs
2ms
0,1A
1V
DC
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
180W
160W
140W
120W
100W
80W
60W
40W
20W
0 W2 5 ° C
50°C
75°C 100°C 125°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
40A
30A
20A
10A
0A
25°C
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 2
Apr-04
5 Page 
Soft Switching Series
IHW20T120
TJ=150°C
25A
20A TJ=25°C
15A
10A
5A
0A
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
-600A/µs
TJ=25°C
-500A/µs
-400A/µs
-300A/µs
TJ=150°C
-200A/µs
-100A/µs
-0A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
TJ=25°C
20A 150°C
10A
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2,0V
IF=15A
1,5V
1,0V
8A
5A
2,5A
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage
as a function of junction temperature
Power Semiconductors
11
Rev. 2
Apr-04
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IHW20T120.PDF ] | |
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