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PDF TSM35N03 Data sheet ( Hoja de datos )
| Número de pieza | TSM35N03 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM35N03
Preliminary
N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
VDS = 30V
ID = 50A
RDS (on), Vgs @ 10V, Ids @ 30A = 8.5mΩ
RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ
Features
Advanced trench process technology
Fully Characterized Avalanche Voltage and Current
High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor
Drivers
Block Diagram
Ordering Information
Part No.
TSM35N03CP
Packing
Tape & Reel
Package
TO-252
Absolute Maximum Rating (TA = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA = 25 oC
TA = 100 oC
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
EAS
Parameter
Lead Temperature (1/8” from case)
Junction-to-case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in2 2oz Cu PCB board
Symbol
TL
Rθjc
Rθja
Limit
30
±20
50
350
57
23
+150
-55 to +150
300
Limit
10
2.2
50
Unit
V
V
A
W
W/oC
oC
oC
mJ
Unit
S
oC/W
TSM35N03
1-3 2005/04 rev. A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSM35N03.PDF ] | |
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