(PDF) M01N60 Datasheet - N Channel MOSFET

Número de pieza	M01N60
Descripción	N Channel MOSFET
Fabricantes	ETC
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No Preview Available ! N Channel MOSFET 1.0A PIN CONFIGURATION TO-251 TO-252 1.Gate 2.Drain 3.Source M01N60 FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature ABSOLUTE MAXIMUM RATINGS RATING SYMBOL VALUE UNIT Drain to Current - Continuous - Pulsed ID 1.0 A IDM 5.0 Gate-to-Source Voltage – Continue - Non-repetitive VGS VGSM +/-30 +/-40 V V Total Power Dissipation TO-251/252 PD W 50 Operating and Storage Temperature Range TJ, TSTG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy – Tj = 25 (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25 Thermal Resistance – Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds EAS JA TL 20 mJ 1.0 /W 62.5 260 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Page 1 1 page 5 Page

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PDF M01N60 Data sheet ( Hoja de datos )