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PDF 02N60P Data sheet ( Hoja de datos )

Número de pieza 02N60P
Descripción SSM02N60P
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SSM02N60P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Repetitive-avalanche rated
Fast-switching
Simple drive requirement
Description
G
D
S
TO-220
The TO-220 package is widely preferred for commercial and industrial
applications. The SSM02N60P is well suited for DC/DC and AC/DC
converters in telecom, industrial and consumer applications.
BV DSS
RDS(ON)
ID
G
600V
8Ω
2A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 20
2
1.26
6
39
0.31
130
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
3.2
62
Unit
/W
/W
Rev.2.01 6/06/2003
www.SiliconStandard.com
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02N60P pdf
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SSM02N60P
16
I D =2A
14
12
10
V DS =320V
V DS =400V
V DS =480V
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
T j = 25 o C
1
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0
50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.01 6/06/2003
www.SiliconStandard.com
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