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MR16R162GDF0 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 MR16R162GDF0은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 MR16R162GDF0 기능
기능 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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MR16R162GDF0 데이터시트, 핀배열, 회로
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy.
* Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMMModule Datasheet
Page 0
Version 1.0 July 2002




MR16R162GDF0 pdf, 반도체, 판매, 대치품
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Table 3: Module Connector Pad Description
Signal
Gnd
LCFM
LCFMN
LCMD
LCOL4..
LCOL0
LCTM
LCTMN
LDQA8..
LDQA0
LDQB8..
LDQB0
LROW2..
LROW0
LSCK
NC
RCFM
RCFMN
RCMD
Pins
A1, A3, A5, A7, A9, A11, A13, A15,
A17, A19, A21, A23, A25, A27, A29,
A31, A33, A39, A52, A60, A62, A64,
A66, A68, A70, A72, A74, A76, A78,
A80, A82, A84, A86, A88, A90, A92,
B1, B3, B5, B7, B9, B11, B13, B15,
B17, B19, B21, B23, B25, B27, B29,
B31, B33, B39, B52, B60, B62, B64,
B66, B68, B70, B72, B74, B76, B78,
B80, B82, B84, B86, B88, B90, B92
B10
B12
B34
A20, B20, A22, B22, A24
A14
A12
A2, B2, A4, B4, A6, B6, A8, B8, A10
B32, A32, B30, A30, B28, A28, B26,
A26, B24
B16, A18, B18
A34
A16, B14, A38, B38, A40, B40, A43,
B43, A44, B44, A45, B45, A46, B46,
A47, B47, A48, B48, A49, B49, A50,
B50, A77, B79
B83
B81
B59
I/O Type
Description
Ground reference for RDRAM core and interface. 72 PCB
connector pads.
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Positive polarity.
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Negative polarity.
I
VCMOS
Serial Command used to read from and write to the control
registers. Also used for power management.
I
RSL
Column bus. 5-bit bus containing control and address infor-
mation for column accesses.
I
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Positive polarity.
I
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Negative polarity.
Data bus A. A 9-bit bus carrying a byte of read or write data
I/O RSL between the Channel and the RDRAM device. LDQA8 is
non-functional on modules with x16 RDRAM devices
Data bus B. A 9-bit bus carrying a byte of read or write data
I/O RSL between the Channel and the RDRAM device. LDQB8 is non-
functional on modules with x16 RDRAM devices.
I
RSL
Row bus. 3-bit bus containing control and address information
for row accesses.
I
VCMOS
Serial Clock input. Clock source used to read from and write
to the RDRAM control registers.
These pads are not connected. These 24 connector pads are
reserved for future use.
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Positive polarity.
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Negative polarity.
I
VCMOS
Serial Command Input. Pin used to read from and write to the
control registers. Also used for power management.
Page 3
Version 1.0 July 2002

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MR16R162GDF0 전자부품, 판매, 대치품
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Absolute Maximum Ratings
Table 4: Absolute Maximum Ratings
Symbol
VI,ABS
VDD,ABS
TSTORE
TPLATE
Parameter
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
Voltage on VDD with respect to Gnd
Storage temperature
Plate temperature
Min
- 0.3
- 0.5
- 50
-
DC Recommended Electrical Conditions
Table 5: DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Min
VDD
VCMOS
Supply voltage
CMOS I/O power supply at pad for 2.5V controllers:
CMOS I/O power supply at pad for 1.8V controllers:
2.50 - 0.13
VDD
1.8 - 0.1
VREF
VSPD
Reference voltage
Serial Presence Detector- Positive power supply
1.4 - 0.2
2.2
Max
VDD + 0.3
VDD + 1.0
100
92
Unit
V
V
°C
°C
Max
2.50 + 0.13
VDD
1.8 + 0.2
1.4 + 0.2
3.6
Unit
V
V
V
V
V
Table 6: RIMM Module Capacity and Number of RDRAM device
RIMM Module Capacity:
Number of 256/288Mb RDRAM devices
512/576MB
16
256/288MB
8
128/144MB
4
64/72MB
2
Page 6
Version 1.0 July 2002

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관련 데이터시트

부품번호상세설명 및 기능제조사
MR16R162GDF0

(MR1xR1622(4/8/G)DF0) Key Timing Parameters

Samsung semiconductor
Samsung semiconductor
MR16R162GDF0

(MR1xR1622(4/8/G)DF0) Key Timing Parameters

Samsung semiconductor
Samsung semiconductor

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