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PDF 2SK3901 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3901 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3901
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3901 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3901-ZK
TO-263 (MP-25ZK)
FEATURES
• Super low On-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low Ciss: Ciss = 1950 pF TYP.
• Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±150
Total Power Dissipation (TC = 25°C)
PT1
64
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg −55 to +150
EAS 68
IAR 26
EAR 68
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. RG = 25 Ω, Tch(peak) ≤ 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17176EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
25
20
VGS = 4.5 V
15
10 V
10
5
0
-75
ID = 30 A
Pulsed
-25 25 75 125
Tch - Channel Temperature - °C
175
SWITCHING CHARACTERISTICS
100
td(off)
10
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
10
ID - Drain Current - A
td(on)
tr
tf
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100 VGS = 10 V
10 0 V
1
0.1
0
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
2SK3901
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
ID = 60 A
50 VDD = 48 V
30 V
40 12 V
12
10
8
30 6
20 VGS 4
10
0
0
VDS
10 20 30 40
QG - Gate Charge - nC
2
0
50
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µ s
VGS = 0 V
100
10
1
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D17176EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3901.PDF ] | |
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