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PDF 79C2040 Data sheet ( Hoja de datos )
| Número de pieza | 79C2040 | |
| Descripción | 20 Megabit (512K x 40-Bit) EEPROM MCM | |
| Fabricantes | Maxwell Technologies | |
| Logotipo |  |
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79C2040
20 Megabit (512K x 40-Bit)
EEPROM MCM
FEATURES:
512k x 40-bit EEPROM MCM
• RAD-PAK® radiation-hardened against natural
• space radiation
• Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
• Excellent Single event effects
- SELTH > 120 MeV/mg/cm2
- SEU > 90 MeV/mg/cm2 read mode
- SEU = 18 MeV/mg/cm2 write mode
• High endurance
- 10,000 cycles/byte (Page Programming Mode)
- 10 year data retention
• Page Write Mode: 128 Dword Page
• High Speed:
- 150 and 200 ns maximum access times
• Automatic programming
- 10 ms automatic Page/Dword write
• Low power dissipation
- 375 mW/MHz active current
-3. 2 mW standby current
Logic Diagram
DESCRIPTION:
Maxwell Technologies’ 79C2040 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
ented radiation-hardened RAD-PAK® MCM packaging
technology, the 79C2040 is the first radiation-hardened 20
megabit MCM EEPROM for space application. The 79C2040
uses twenty 1 Megabit high speed CMOS die to yield a 20
megabit product. The 79C2040 is capable of in-system electri-
cal byte and page programmability. It has a 128 word page
programming function to make the erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C2040, hardware data protection is provided with the
RES pin, in addition to noise protection on the WE signal and
write inhibit on power on and off. Software data protection is
implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K
04.20.05Rev 1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice 1
©2005 Maxwell Technologies
All rights reserved.
1 page  
20 Megabit (512 x 40-Bit) EEPROM MCM
79C2040
PARAMETER
TABLE 6. 79C2040 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(V
CC
=
5V
±
10%,
TA
=
-55
TO
+125°
C)
SYMBOL
SUBGROUPS
MIN
MAX
Address Access Time CE = OE = VIL, WE = VIH
-150
-200
tACC 9, 10, 11
--
--
150
200
Chip Enable Access Time OE = VIL, WE = VIH
-150
-200
tCE 9, 10, 11
--
--
150
200
Output Enable Access TIme CE = VIL, WE = VIH
-150
-200
tOE 9, 10, 11
0
0
75
100
Output Hold to Address Change CE = OE =VIL, WE = VIH
-150
-200
Output Disable to High-Z 2
CE = VIL, WE = VIH
-150
-200
CE = OE = VIL, WE = VIH
-150
-200
RES to Output Delay CE = OE = VIL, WE = VIH3
-150
-200
tOH
tDF
tDFR
TRR
9, 10, 11
9, 10, 11
9, 10, 11
0
0
0
0
0
0
0
0
--
--
50
60
350
450
450
650
UNIT
ns
ns
ns
ns
ns
ns
ns
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and fixture); reference levels for measuring timing = 0.8 V/1.8 V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
PARAMETER
TABLE 7. 79C2040 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(V
CC
=
5V
±
10%,
TA
=
-55
TO
+125°
C)
SYMBOL
SUBGROUPS
MIN 1
MAX
Address Setup Time
-150
-200
tAS 9, 10, 11
0
0
--
--
Chip Enable to Write Setup Time (WE controlled)
-150
-200
tCS 9, 10, 11
0
0
--
--
UNITS
ns
ns
04.20.05 Rev 1
All data sheets are subject to change without notice 5
©2005 Maxwell Technologies
All rights reserved
5 Page 
20 Megabit (512 x 40-Bit) EEPROM MCM
79C2040
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading
the first byte of data, the data load window opens 30µ s for the second byte. In the same manner each additional byte
of data can be loaded within 30µ s of the preceding falling edge of either WE or CE. When CE and WE are kept high
for 100µ s after data input, the EEPROM enters the write mode automatically and the data input is written into the
EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
04.20.05 Rev 1
All data sheets are subject to change without notice 11
©2005 Maxwell Technologies
All rights reserved
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet 79C2040.PDF ] | |
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