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PDF MA7D50A Data sheet ( Hoja de datos )
| Número de pieza | MA7D50A | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3D750, MA3D750A (MA7D50, MA7D50A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
I Features
• Low forward voltage VF
• High dielectric breakdown voltage: > 5 kV
• Easy-to-mount, due to its V cut lead end
• TO-220D-A1 package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Repetitive peak MA3D750
reverse-voltage MA3D750A
VRRM
40
45
Average forward current
Non-repetitive peak forward-
surge-current *
IF(AV)
IFSM
10
120
Junction temperature
Storage temperature
Tj −40 to +125
Tstg −40 to +125
Note) *: Half sine wave; 10 ms/cycle
Unit
V
A
A
°C
°C
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1 : Anode
2 : Cathode
3 : Anode
TO-220D-A1 Package
Internal Connection
1 23
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA3D750
MA3D750A
Forward voltage (DC)
High voltage rectification
IR
VF
Rth(j-c)
VR = 40 V, TC = 25°C
VR = 45 V, TC = 25°C
IF = 5 A, TC = 25°C
Smoothed current (between junction and case)
3 mA
3
0.55 V
3 °C/W
Note) Rated input/output frequency: 150 MHz
Publication date: August 2001
Note) The part number in the parenthesis shows conventional part number.
SKH00043AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MA7D50A.PDF ] | |
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