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부품번호 | TSAL5100 기능 |
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기능 | GaAs/GaAlAs IR Emitting Diode | ||
제조업체 | Vishay Siliconix | ||
로고 | |||
전체 5 페이지수
TSAL5100
om Vishay Telefunken
t4U.c ¾GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 )
ePackage
SheDescription
taTSAL5100 is a high efficiency infrared emitting diode
ain GaAlAs on GaAs technology, molded in clear, blue-
.Dgrey tinted plastic packages.
wIn comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
ww radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
mideally suitable as high performance replacements of
standard emitters.
.coFeatures
D Extra high radiant power and radiant intensity
UD High reliability
t4D Low forward voltage
D Suitable for high pulse current operation
eD Standard T–1¾ (ø 5 mm) package
eD Angle of half intensity ϕ = ± 10°
D Peak wavelength lp = 940 nm
hD Good spectral matching to Si photodetectors
taSApplications
Infrared remote control units with high power requirements
Free air transmission systems
aInfrared source for optical counters and card readers
IR source for smoke detectors
96 11505
.DAbsolute Maximum Ratings
wTamb = 25_C
wParameter
Reverse Voltage
wForward Current
Peak Forward Current
omSurge Forward Current
.cPower Dissipation
UJunction Temperature
t4Operating Temperature Range
eStorage Temperature Range
eSoldering Temperature
hThermal Resistance Junction/Ambient
Test Conditions
tp/T = 0.5, tp = 100 m s
tp = 100 m s
xt 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ataSDocument Number 81007
www.DRev. 1, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TSAL5100
Vishay Telefunken
1.25
1.0
0.75
0.5
0.25
14291
0
890
IF = 100 mA
940
l – Wavelength ( nm )
990
Figure 9. Relative Radiant Power vs. Wavelength
Dimensions in mm
0° 10 20
°°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
15989
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
www.vishay.de • FaxBack +1-408-970-5600
4 (5)
14435
Document Number 81007
Rev. 1, 20-May-99
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSAL5100 | GaAs/GaAlAs IR Emitting Diode | Vishay Siliconix |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |