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PDF MJD148 Data sheet ( Hoja de datos )
| Número de pieza | MJD148 | |
| Descripción | NPN Silicon Power Transistor | |
| Fabricantes | ON Semiconductor | |
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MJD148
NPN Silicon Power
Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
• High Gain − 50 Min @ IC = 2.0 A
• Low Saturation Voltage − 0.5 V @ IC = 2.0 A
• High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @
IC = 250 mAdc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; >8000 V
Machine Model, C; >400 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
Peak
VCEO 45 Vdc
VCB 45 Vdc
VEB 5.0 Vdc
IC 4.0 Adc
7.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25°C
Derate above 25°C
IB 50 mAdc
PD 20 W
0.16 W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TA = 25°C
Derate above 25°C
PD
1.75 W
0.014 W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
−55 to
+ 150
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(Note 1)
RqJC
RqJA
6.25 °C/W
71.4 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnormal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎand reliability may be affected.
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1. These ratings are applicable when surface mounted on the minimum pad
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎsizes recommended.
http://onsemi.com
4.0 Amps
45 Volts
20 Watts
POWER TRANSISTOR
12
3
4
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAM
YWW
J148
J148
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
MJD148T4
DPAK 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 2
1
Publication Order Number:
MJD148/D
1 page  
MJD148
10
5 500 ms
3
2
dc
1 5 ms
0.5 1 ms
0.3
0.2
0.1 BONDING WIRE LIMIT
THERMAL LIMIT
0.05 SECOND BREAKDOWN LIMIT
0.03
0.02
TC = 25°C SINGLE PULSE, D ≤ 0.1%
TJ = 150°C
0.01
1
2 3 5 7 10
20 30
50 70
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Maximum Rated Forward Bias
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 150°C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJD148.PDF ] | |
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