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G30N60 데이터시트 PDF




ETC에서 제조한 전자 부품 G30N60은 전자 산업 및 응용 분야에서
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기능 HGTG30N60
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G30N60 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Data Sheet
HGTG30N60A4
August 2003
File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60A4
TO-247
G30N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 30A
• 200kHz Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1




G30N60 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
HGTG30N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
50
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
40
30
20
10
0
0
TJ = 125oC
TJ = 150oC
TJ = 25oC
0.5 1.0 1.5 2.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
50
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
40
30
20
TJ = 125oC
10
TJ = 150oC
TJ = 25oC
0
0 0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3500
3000
2500
RG = 3, L = 200µH, VCE = 390V
TJ = 125oC, VGE = 12V, VGE = 15V
2000
1500
1000
500
0
0
TJ = 25oC, VGE = 12V, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
34 RG = 3, L = 200µH, VCE = 390V
32 TJ = 25oC, TJ = 125oC, VGE = 12V
30
28
26
24
22 TJ = 25oC, TJ = 125oC, VGE = 15V
20
0
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
1400
RG = 3, L = 200µH, VCE = 390V
1200
1000
800
TJ = 125oC, VGE = 12V OR 15V
600
400
200
0
0
TJ = 25oC, VGE = 12V OR 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
100
RG = 3, L = 200µH, VCE = 390V
80
VGE = 12V, TJ = 125oC, TJ = 25oC
60
TJ = 25oC, VGE = 15V
40
20
0
0
TJ = 125oC, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1

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G30N60 전자부품, 판매, 대치품
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HGTG30N60A4
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handlers body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBDLD26or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1

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관련 데이터시트

부품번호상세설명 및 기능제조사
G30N60

HGTG30N60

ETC
ETC
G30N60A4D

SMPS Series N-Channel IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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