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U420B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 U420B
기능 IRFU420B
제조업체 Fairchild
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U420B 데이터시트, 핀배열, 회로
www.DataSheet4U.com
November 2001
IRFR420B / IRFU420B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 2.3A, 500V, RDS(on) = 2.6@VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D-PAK
IRFR Series
I-PAK
GDS
IRFU Series
DataSheet4U.com
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
◀▲
!
S
IRFR420B / IRFU420B
500
2.3
1.5
8.0
± 30
200
2.3
4.1
5.5
2.5
41
0.33
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 3.05 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. B, November 2001
DataSheet4 U .com
DataSheet4U.com
DataShee




U420B pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
et4U.com
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 1.25 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
101
100
10-1
10-2
100
2.5
Operation in This Area
is Limited by RDS(on)
2.0
10 µs
100 µs
1 ms
10 ms
DC
1.5
DataSheet4U.c1o.0m
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
0.5
0.0
25
50 75 100 125
TC, Case Temperature []
150
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
DataShee
D = 0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
sin gle pu lse
N otes :
1. Z θ JC(t) = 3.05 /W M ax.
2. D uty Factor, D =t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S qu a re W ave P u lse D u ra tion [se c]
1
Figure 11. Transient Thermal Response Curve
101
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
DataSheet4 U .com
Rev. B, November 2001
DataSheet4U.com

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U420B 전자부품, 판매, 대치품
www.DataSheet4U.com
Package Dimensions
(0.50)
6.60 ±0.20
5.34 ±0.30
(4.34)
D-PAK
(0.50)
2.30 ±0.10
0.50 ±0.10
et4U.com
MAX0.96
2.30TYP
[2.30±0.20]
0.76 ±0.10
DataSheet4U.com
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(2XR0.25)
DataShee
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
DataSheet4 U .com
0.76 ±0.10
Dimensions in Millimeters
Rev. B, November 2001
DataSheet4U.com

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