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PDF TS128MEP6100 Data sheet ( Hoja de datos )
| Número de pieza | TS128MEP6100 | |
| Descripción | 128MB 90PIN PC133 CL3 SDRAM | |
| Fabricantes | Transcend Information | |
| Logotipo |  |
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TS128MEP6t41U0.c0omDescription
eThe TS128MEP6100 is a 32M bit x 32 Synchronous
heDynamic RAM high-density memory modules. The
STS128MEP6100 consists of 4 pieces of CMOS 16Mx16bits
taSynchronous DRAMs in TSOP-II 400mil packages on a 90-pin
.Daprinted circuit board. The TS128MEP6100 is a one Line Memory
Module and is intended for mounting into 90-pin edge connector
wwsockets.
w Synchronous design allows precise cycle control with
mthe use of system clock. I/O transactions are possible on every
oclock cycle. Range of operation frequencies, programmable
.clatencies allow the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
UFeatures
t4• Performance Range: PC133.
• Burst Mode Operation.
e• Auto and Self Refresh.
e• LVTTL compatible inputs and outputs.
• Single 3.3V + 0.3V power supply.
h• MRS cycle with address key programs.
SLatency (Access from column address)
taBurst Length (1,2,4,8 & Full Page)
Data Scramble (Sequential & Interleave)
a• All inputs are sampled at the positive going edge
of the system clock.
128MB 90PIN PC133 CL3 SDRAM
SO-DIMM With 16M X 16 3.3VOLT
Placement
PCB: 09-1730
www.D www.DataSheet4U.comTranscend information Inc.
1
1 page  
TS128MEP6100
128MB 90PIN PC133 CL3 SDRAM
SO-DIMM With 16M X 16 3.3VOLT
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply to Vss
Storage temperature
Power dissipation
Mean time between failure
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
MTBF
Value
-1.0 to +4.6
-1.0 to +4.6
-55 to +125
4
50
Unit
V
V
°C
W
Years
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device
reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (TA = 0 to 70°C)
Parameter
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
output leakage current
Symbol
VIH
VIL
VOH
VOL
IIL
IoL
Min
2.0
-0.3
2.4
-
-10
-10
Typ
Max
Unit
Note
3.0 VDD+0.3 V
1
0 0.8 V
2
- - V IOH=-2mA
- 0.4 V IOL=2mA
- 10 uA
3
- 10 uA
-
Note: 1. VIH (max) = 2.0V AC .The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC .The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 3.3V ± .0.3V, TA = 0°C~70°C)
Parameter
Input capacitance (A0~A11, BA0~ BA1)
Input capacitance (/RAS, /CAS, /WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (/CS0~ /CS3)
Input capacitance (DQM0~DQM1)
Data input/output capacitance (DQ0~DQ31)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
COUT1
Min
-
-
-
-
-
-
-
Max
40
40
40
14
10
10
14
Unit
pF
pF
pF
pF
pF
pF
pF
Transcend information Inc.
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TS128MEP6100.PDF ] | |
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