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부품번호 | VP0650 기능 |
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기능 | (VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | ||
제조업체 | Supertex | ||
로고 | |||
전체 4 페이지수
Ordewri.nDgatInafSohrmeeatt4ioUn.comPVe-Crth–icaanlOnDeMl BEOnShSFanEOcTesmLenEt-MTodEe –VVPP00664550BVDSS /
wBVDGS
w -450V
m-500V
RDS(ON)
(max)
30Ω
30Ω
o† MIL visual screening available
ID(ON)
(min)
-0.2A
-0.2A
TO-39
VP0645N2
—
Order Number / Package
TO-92
—
VP0650N3
TO-220
—
VP0650N5
Die†
VP0645ND
VP0650ND
Advanced DM.OcS TechnologyHigh Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
UFlows and Ordering Information.
Features et4■ Free from secondary breakdown
e■ Low power drive requirement
h■ Ease of paralleling
■
Low C and fast switching speeds
ISS
S■ Excellent thermal stability
ta■ Integral Source-Drain diode
■ High input impedance and high gain
a■ Complementary N- and P-channel devices
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications .D Package Options■ Motor controls
w■ Converters
w■ Amplifiers
■ Switches
w om■ Power supply circuits
.c■ Drivers (relays, hammers, solenoids, lamps, memories,
Udisplays, bipolar transistors, etc.)
Absolute Maximum Ratings Sheet4Drain-to-Source Voltage
taDrain-to-Gate Voltage
aGate-to-Source Voltage
.DOperating and Storage Temperature
wSoldering Temperature*
ww* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
G DS
TO-220
TAB: DRAIN
DGS
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.
7-245
7
9
– OBSOLETE –Typical Performance Curves
BVDSS Variation with Temperature
VP0645/VP0650
On-Resistance vs. Drain Current
50
1.1
VGS = -5V
40
VGS = -10V
30
1.0
20
0.9
-50 0 50 100
Tj (°C)
Transfer Characteristics
-1.0
VDS = -25V
-0.8
TA = -55°C
-0.6
TA = 25°C
-0.4
150
-0.2 TA = 150°C
0
0 -2 -4 -6 -8 -10
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
200
f = 1MHz
150
100
50
0
0
CISS
COSS
CRSS
-10 -20 -30
VDS (volts)
-40
10
0
0 -0.2 -0.4 -0.6 -0.8 -1.0
ID (amperes)
V(th) and RDS Variation with Temperature
2.0
1.2 RDS(ON) @ -10V, -0.1A
1.1
1.0 1.0
0.9
0.8
-50
V(th) @ -2mA
0 50 100
Tj (°C)
0
150
Gate Drive Dynamic Characteristics
-10
VDS = -10V
-8
VDS = -40V
-6
250 pF
-4
90 pF
-2
0
0 0.5 1.0 1.5 2.0 2.5
QG (nanocoulombs)
7-248
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VP0650 | (VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | Supertex |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |