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Número de pieza | STU10NC70ZI | |
Descripción | N-Channel MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STU10NC70ZI (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! t4U.com STU10NC70Z
ee STU10NC70ZI
Sh N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220
ta Zener-Protected PowerMESH™ III MOSFET
w.DaTYPE
w STU10NC70Z
w STU10NC70ZI
VDSS
700 V
700 V
RDS(on)
<0.75Ω
<0.75Ω
ID
9.4 A
9.4 A
s TYPICAL RDS(on) = 0.58Ω
s EXTREMELY HIGH dv/dt CAPABILITY
ms GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
os VERY LOW INTRINSIC CAPACITANCES
.cs GATE CHARGE MINIMIZED
DESCRIPTION
UThe third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
t4passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
eity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
eAPPLICATIONS
hs SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
Ss WELDING EQUIPMENT
taABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
.DaVDS
VDGR
VGS
wID
wID
wIDM (1)
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
123
Max220
I-Max220
Value
STU10NC70Z STU10NC70ZI
700
700
±25
9.4 9.4(*)
5.9 5.9(*)
37.6
37.6(*)
Unit
V
V
V
A
A
A
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt(q) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Sep 2000
160 55 W
m1.28
0.44
W/ °C
o±50 mA
.c4 KV
U3 V/ns
t4--
2000
V
ee–65 to 150
°C
h150 °C
taS(1)ISD ≤9.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
www.Da(*)Limited only by maximum temperature allowed
1/10
1 page Transconductance
STU10NC70Z/STU10NC70ZI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet STU10NC70ZI.PDF ] |
Número de pieza | Descripción | Fabricantes |
STU10NC70Z | N-Channel MOSFET | ST Microelectronics |
STU10NC70ZI | N-Channel MOSFET | ST Microelectronics |
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